Datasheet4U Logo Datasheet4U.com

GSMBR0580 Datasheet, Diode, GOOD-ARK

✔ GSMBR0580 Features

PDF File Details

Manufacture Logo for GOOD-ARK
GOOD-ARK manufacturer logo

Part number:

GSMBR0580

Manufacturer:

GOOD-ARK

File Size:

739.10kb

Download:

📄 Datasheet

Description:

Schottky barrier diode.

Datasheet Preview: GSMBR0580 📥 Download PDF (739.10kb)
Page 2 of GSMBR0580 Page 3 of GSMBR0580

TAGS

GSMBR0580
Schottky
Barrier
Diode
GOOD-ARK

📁 Related Datasheet

GSMBR0520 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBR0530 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBR0540 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBR0560 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBD2004 - SWITCHING DIODE (GTM)
.. ISSUED DATE :2005/12/23 REVISED DATE : GSM BD2004 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 3 0 0 V, C U .

GSMBD4148 - SWITCHING DIODE (GTM)
.. ISSUED DATE :2004/12/13 REVISED DATE : GSM BD4148 Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E .

GSMBSS123 - N-Channel MOSFET (Globaltech)
GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description The GSMBSS123 is the N-Channel enhancement mode field effect transistors are pro.

GSMBSS139 - N-Channel MOSFET (Globaltech)
GSMBSS139 50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology..

GSMBSS139W - 60V N-Channel MOSFET (Globaltech)
- These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially T.

GSMBSS139Y - Dual N-Channel Enhancement MOSFET (Globaltech)
GSMBSS139Y Dual N-Channel Enhancement MOSFET Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trenc.

Since 2006. D4U Semicon. Datasheet4U.com Contact Us Privacy Policy Purchase of parts