GSMBSS123 Datasheet | Globaltech

100V N-Channel Enhancement Mode MOSFET Product Description The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Features - 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V - SOT-23 package design - Lead(Pb)-Free Applications - DC to DC Converter - Cellular & PCMCIA Card - Cordless Telephone - Power Management in Portable and Battery etc. Packages & Pin Assignments GSMBSS123JZF (SOT-23) Pin Description 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSMBSS123 JZ F Package...