GSMBSS123 Datasheet PDF

Globaltech GSMBSS123

The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Part No.	GSMBSS123
Datasheet	GSMBSS123 Download
Manufacturer	Globaltech
Description	N-Channel MOSFET
Buy	Stock & Price

DESCRIPTION

FEATURES

100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V SOT-23 package design Lead(Pb)-Free

APPLICATIONS

DC to DC Converter Cellular & PCMCIA Card Cordless Telephone Power Management in Portable and Battery etc. Packages & Pin Assignments GSMBSS123JZF (SOT-23) GSMBSS123 Pin

DESCRIPTION

1 Gate 2 Source 3 Drain Ordering Information GS P/N GSMBSS123 JZ F Package Code Pb Free Code Part Number GSMBSS123JZF Package SOT-23 Quantity 3000 PCS 1 Marking Information Part Number GSMBSS123JZF Package SOT-23 Part Marking SAT

ABSOLUTE MAXIMUM RATINGS

(TA=25ºC Unless otherwise noted) Symbol Parameter VDSS Drain-Source Voltage VGS VG