GSMBSS123 Datasheet PDF - Globaltech N-Channel MOSFET Specs

GSMBSS123 - N-Channel MOSFET

Datasheet Summary

Description

The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

Features

100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V.
SOT-23 package design.
Lead(Pb)-Free.

Datasheet Details

Part number	GSMBSS123
Manufacturer	Globaltech
File Size	229.90 KB
Description	N-Channel MOSFET
Datasheet	GSMBSS123 Datasheet
Additional preview pages of the GSMBSS123 datasheet.

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Full PDF Text Transcription

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GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. Features 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V SOT-23 package design Lead(Pb)-Free Applications DC to DC Converter Cellular & PCMCIA Card Cordless Telephone Power Management in Portable and Battery etc. Packages & Pin Assignments GSMBSS123JZF (SOT-23) GSMBSS123 Pin Description 1 Gate 2 Source 3 Drain Ordering Information GS P/N GSMBSS123 JZ F Package Code Pb Free Code Part Number GSMBSS123JZF Package SOT-23 Quantity 3000 PCS www.gs-power.

Published: Sep 9, 2018 |