GSMBSS123 - N-Channel MOSFET

Globaltech

GSMBSS123 Description

GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product .
The GSMBSS123 is the N-Channel enhancement mode field effect transistors are produced using high cell density DMOS technology.

GSMBSS123 Features

* 100V, 0.17A, RDS(ON)=6.0Ω@VGS=10V
* SOT-23 package design

GSMBSS123 Applications

* DC to DC Converter
* Cellular & PCMCIA Card
* Cordless Telephone

📥 Download Datasheet

GSMBSS123 Datasheet Preview — Preview of GSMBSS123 PDF

Datasheet Details

Part number: GSMBSS123
Manufacturer: Globaltech
File Size: 229.90 KB
Datasheet: GSMBSS123-Globaltech.pdf
Description: N-Channel MOSFET

📁 Related Datasheet

GSMBD2004 - SWITCHING DIODE (GTM)
GSMBD4148 - SWITCHING DIODE (GTM)
GSMBR0520 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0530 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0540 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0560 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0580 - Schottky Barrier Diode (GOOD-ARK)
GSMBRD20100 - Surface Mount Schottky Rectifiers (GOOD-ARK)

📌 All Tags

N-Channel MOSFET Globaltech

Globaltech GSMBSS123-like datasheet

GSMBSS139 - N-Channel MOSFET
GSMBSS139W - 60V N-Channel MOSFET
GSMBSS139Y - Dual N-Channel Enhancement MOSFET
GSMBSS84 - 60V P-Channel Enhancement Mode MOSFET
GSM02N15 - N-Channel MOSFET
GSM02P15 - P-Channel MOSFET

GSMBSS123 Stock/Price