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GSMBSS84 - 60V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

GSMBSS84, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • SOT-23 package design.

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Datasheet Details

Part number GSMBSS84
Manufacturer Globaltech
File Size 524.56 KB
Description 60V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet GSMBSS84 Datasheet
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GSMBSS84 60V P-Channel Enhancement Mode MOSFET Product Description GSMBSS84, P-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Features  -60V/-0.13A,RDS(ON)=10Ω@VGS=-5V  Super high density cell design for extremely low RDS (ON)  Exceptional on-resistance and maximum DC current capability  SOT-23 package design Applications  DC to DC Converter  Cellular & PCMCIA Card  Cordless Telephone  Power Management in Portable and Battery etc.
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