GSMBR0540 Datasheet, Diode, GOOD-ARK

GSMBR0540 Features

  • Diode z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Application and High Current Capability SOD-123 Marking GSMBR0520:R2 GSMBR0530:R3 GSMBR0540:R

PDF File Details

Part number:

GSMBR0540

Manufacturer:

GOOD-ARK

File Size:

739.10kb

Download:

📄 Datasheet

Description:

Schottky barrier diode.

Datasheet Preview: GSMBR0540 📥 Download PDF (739.10kb)
Page 2 of GSMBR0540 Page 3 of GSMBR0540

TAGS

GSMBR0540
Schottky
Barrier
Diode
GOOD-ARK

📁 Related Datasheet

GSMBR0520 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBR0530 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBR0560 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBR0580 - Schottky Barrier Diode (GOOD-ARK)
GSMBR0520-GSMBR0580 Schottky Barrier Diodes Features z Lead Free Finish/RoHS Compliant z Extremely Low Thermal Resistance z For Surface Mount Applica.

GSMBD2004 - SWITCHING DIODE (GTM)
.. ISSUED DATE :2005/12/23 REVISED DATE : GSM BD2004 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 3 0 0 V, C U .

GSMBD4148 - SWITCHING DIODE (GTM)
.. ISSUED DATE :2004/12/13 REVISED DATE : GSM BD4148 Description S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E .

GSMBSS123 - N-Channel MOSFET (Globaltech)
GSMBSS123 100V N-Channel Enhancement Mode MOSFET Product Description The GSMBSS123 is the N-Channel enhancement mode field effect transistors are pro.

GSMBSS139 - N-Channel MOSFET (Globaltech)
GSMBSS139 50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology..

GSMBSS139W - 60V N-Channel MOSFET (Globaltech)
- These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially T.

GSMBSS139Y - Dual N-Channel Enhancement MOSFET (Globaltech)
GSMBSS139Y Dual N-Channel Enhancement MOSFET Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trenc.

Stock and price

Suzhou Good-Ark Electronics Co Ltd
DIODE, SCHOTTKY, 500MA, 40V, SOD
DigiKey
GSMBR0540
3353 In Stock
Qty : 1000 units
Unit Price : $0.05
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts