GSMBSS139 Datasheet PDF - Globaltech N-Channel MOSFET Specs

GSMBSS139 - N-Channel MOSFET

Datasheet Summary

Description

These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode.

Features

50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V.
Improved dv/dt Capability.
Fast Switching.
Low Threshold Voltage(VGS(th)：0.5…1.5V) Makes It Ideal for Low Voltage.

Datasheet Details

Part number	GSMBSS139
Manufacturer	Globaltech
File Size	1.68 MB
Description	N-Channel MOSFET
Datasheet	GSMBSS139 Datasheet
Additional preview pages of the GSMBSS139 datasheet.

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Full PDF Text Transcription

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GSMBSS139 50V N-Channel MOSFETs Product Description These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications. Packages & Pin Assignments GSMBSS139JZF (SOT-23) Features  50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V  Improved dv/dt Capability  Fast Switching  Low Threshold Voltage(VGS(th)：0.5…1.

Published: Sep 9, 2018 |