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GSMBSS139

N-Channel MOSFET

GSMBSS139 Features

* 50V, 0.2A, RDS(ON)=3.5Ω@VGS=5V

* Improved dv/dt Capability

* Fast Switching

* Low Threshold Voltage(VGS(th)：0.5…1.5V) Makes It Ideal for Low Voltage Application

* 100% EAS Guaranteed

* Green Device Available

* SOT-23 Package Design Applications

* Notebook

* Load

GSMBSS139 General Description

These N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. Thes.

GSMBSS139 Datasheet (1.68 MB)

Preview of GSMBSS139 PDF

Datasheet Details

Part number:

GSMBSS139

Manufacturer:

Globaltech

File Size:

1.68 MB

Description:

N-channel mosfet.

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TAGS

GSMBSS139 N-Channel MOSFET Globaltech

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