GSMBSS139Y Datasheet - Globaltech

GSMBSS139Y Dual N-Channel Enhancement MOSFET

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode..

GSMBSS139Y Features

* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V

* Improved dv/dt Capability

* Fast Switching

* Green Device Available

* SOT-563 Package Design

* ESD Protected : 1500V Applications

* Notebook

* Load Switch

* LED Applications Packages & Pin Assignments GSMBSS139YX7F (SOT-563)

GSMBSS139Y-Globaltech.pdf

GSMBSS139Y Datasheet Preview — Preview of GSMBSS139Y PDF

Datasheet Details

Part number:

GSMBSS139Y

Manufacturer:

Globaltech

File Size:

1.76 MB

Description:

Dual n-channel enhancement mosfet.

GSMBSS139Y Distributor

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GSMBSS139Y GSMBSS139Y Dual N-Channel Enhancement MOSFET Globaltech