GSMBSS139Y

Dual N-Channel Enhancement MOSFET

Globaltech

GSMBSS139Y Features

* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V

* Improved dv/dt Capability

* Fast Switching

* Green Device Available

* SOT-563 Package Design

* ESD Protected : 1500V Applications

* Notebook

* Load Switch

* LED Applications Packages & Pin Assignments GSMBSS139YX7F (SOT-563)

GSMBSS139Y General Description

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode..

GSMBSS139Y Datasheet (1.76 MB)

GSMBSS139Y Datasheet Preview — Preview of GSMBSS139Y PDF

Datasheet Details

Part number:

GSMBSS139Y

Manufacturer:

Globaltech

File Size:

1.76 MB

Description:

Dual n-channel enhancement mosfet.

📁 Related Datasheet

GSMBSS139 N-Channel MOSFET (Globaltech)

GSMBSS139W 60V N-Channel MOSFET (Globaltech)

GSMBSS123 N-Channel MOSFET (Globaltech)

GSMBSS84 60V P-Channel Enhancement Mode MOSFET (Globaltech)

GSMBD2004 SWITCHING DIODE (GTM)

GSMBD4148 SWITCHING DIODE (GTM)

GSMBR0520 Schottky Barrier Diode (GOOD-ARK)

GSMBR0530 Schottky Barrier Diode (GOOD-ARK)

GSMBR0540 Schottky Barrier Diode (GOOD-ARK)

GSMBR0560 Schottky Barrier Diode (GOOD-ARK)

TAGS

GSMBSS139Y Dual N-Channel Enhancement MOSFET Globaltech

Image Gallery

GSMBSS139Y Features

GSMBSS139Y General Description

Datasheet Details

File Size:

Description:

GSMBSS139Y Distributor