GSMBSS139Y Datasheet (Globaltech) - Dual N-Channel Enhancement MOSFET

GSMBSS139Y, Dual N-Channel Enhancement MOSFET

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode.

GSMBSS139Y Features

* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V

* Improved dv/dt Capability

* Fast Switching

* Green Device Available

* SOT-563 Package Design

* ESD Protected : 1500V Applications

* Notebook

* Load Switch

* LED Applications Packages & Pin Assignments GSMBSS139YX7F (SOT-563)