GSMBSS139Y - Dual N-Channel Enhancement MOSFET

Globaltech

GSMBSS139Y Description

GSMBSS139Y Dual N-Channel Enhancement MOSFET Product .
These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

GSMBSS139Y Features

* 60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V
* Improved dv/dt Capability
* Fast Switching
* Green Device Available
* SOT-563 Package Design

📥 Download Datasheet

GSMBSS139Y Datasheet Preview — Preview of GSMBSS139Y PDF

Datasheet Details

Part number: GSMBSS139Y
Manufacturer: Globaltech
File Size: 1.76 MB
Datasheet: GSMBSS139Y-Globaltech.pdf
Description: Dual N-Channel Enhancement MOSFET

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Dual N-Channel Enhancement MOSFET Globaltech

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GSMBSS139Y Stock/Price