GSMBSS139Y - Dual N-Channel Enhancement MOSFET

Datasheet Summary

Description

These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology.

This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode.

Features

60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.5V.
Improved dv/dt Capability.
Fast Switching.
Green Device Available.
SOT-563 Package Design.
ESD Protected : 1500V.

Globaltech

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Datasheet Details

Part number	GSMBSS139Y
Manufacturer	Globaltech
File Size	1.76 MB
Description	Dual N-Channel Enhancement MOSFET
Datasheet	GSMBSS139Y Datasheet
Additional preview pages of the GSMBSS139Y datasheet.

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Full PDF Text Transcription

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GSMBSS139Y Dual N-Channel Enhancement MOSFET Product Description These Dual N-Channel Enhancement Mode Power Field Effect Transistors are Using Trench DMOS Technology. This Advanced Technology has been Especially Tailored to Minimize on-state Resistance, Provide Superior Switching Performance, and Withstand high Energy Pulse in the Avalanche and Commutation mode. These Devices are well Suited for High Efficiency Fast Switching Applications. Features  60V, 0.2A, RDS(ON)=2.5Ω@VGS=4.

Published: Oct 15, 2024 |