SS22-G Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SS2150F--SS2200F Features  Metal silicon junction, majority carrier conduction  High surge ca

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Switching Diodes Silicon Epitaxial Planar 1SS226 1. Applications • Ultra-High-Speed Switching 2. Features (1) AEC-Q101 qualified (Note 1) Note 1: For

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® WON-TOP ELECTRONICS 1SS226 SURFACE MOUNT FAST SWITCHING DIODE Pb Features  Dual Diode Series  Fast Switching  Surface Mount Package Ideally Sui

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www.vishay.com SS22, SS23, SS24, SS25, SS26 Vishay General Semiconductor Surface-Mount Schottky Barrier Rectifier SMB (DO-214AA) Cathode Anode L

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SS215 THRU SS220 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 150 to 200 Volts Forward Current - 2.0 Ampere FEATURES ● The plastic package carries Un

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RoHS 1SS226 SWITCHING DIODE SOT-23 Plastic-Encapsulate DIODE DFeatures TPower dissipation PD : 150 mW (Tamb=25oC) .,LForward Current IF : 100 mA Re

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Schottky Barrier Rectifiers Production specification SS2150A--SS2200A Features  Metal silicon junction, majority carrier conduction  High surge ca

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1SS226 Features • Low Leakage Current • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Halogen Free. “Green” Device (Note

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SS2200B Surface Mount Schottky Rectifier Features • High Current Capability • Extremely Low Thermal Resistance • For Surface Mount Application • Highe

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WILLAS 2.0AMP SCHOTTKY BARRIER RECTIFIERS FEATURES * Ideal for surface mounted applications * Low leakage current * Metallurgically bonded constructio

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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® WON-TOP ELECTRONICS SS22 – SS210 2.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

Rating: 1 ★ (3 votes)

Features SS22A THRU SS220A 2.0 Amps. Surface Mount Schottky Barrier Rectifiers * The plastic package carries Underwriters Laboratory Flammability Cl

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1SS226 SILICON EPITAXIAL PLANAR DIODE Features • Small package • Low forward voltage • Fast reverse recovery time • Small total capacitance Applicatio

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1SS226 Switching Diodes SOT-23 Features — Low forward voltage : VF (3) = 0.9V (typ.) — Fast reverse recovery time : trr = 1.6ns (typ.) — Small total

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS226 SWITCHING DIODE FEATURES z Low forward voltage z Fast rev

Rating: 1 ★ (3 votes)