SS3 Datasheet | Specifications & PDF Download

www.vishay.com SiSS32LDN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT S

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www.vishay.com SiSS32ADN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT S

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® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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www.vishay.com SiSS32DN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT SU

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www.vishay.com SiSS30ADN Vishay Siliconix N-Channel 80 V (D-S) MOSFET PowerPAK® 1212-8S D D D 6 D 7 8 5 3.3 mm 1 Top View 3.3 mm PRODUCT S

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NotNeRewcDoemsimgennsded for 1SS356 Band Switching Diodes 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0.9 Ω 　 ●F

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® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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Schottky Rectifier SS32 - S310 Description The SS32−S310 series includes a high−efficiency, low power loss, general−propose Schottky rectifiers. The c

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SS34 3A, Schottky Barrier Diode SS34 Http//:www.sh-willsemi.com Features  Schottky barrier rectifier  Guarding protection  Low forward voltage 

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SS32 - SS320 Taiwan Semiconductor 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES ● Low power loss, high efficiency ● Ideal for aut

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® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

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SS3413 CMOS Omnipolar High Sensitivity Micropower Hall Switch Features − Micropower consumption for battery powered applications − Omnipolar, output s

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Silicon Epitaxial Planar Diode FEATURES z Small package z Low forward voltage z Fast reverse recovery time z Small total capacitance Pb Lead-free P

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RoHS 1SS355 1SS355 FAST SWITCHING DIODES TDFEATURES SOD-323 + - O.,LMARKING: A CMaximum Ratings and Electrical Characteristics, Single Diode @TA=2

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Features Schottky barrier rectifier Guardring protection Low forward voltage Reverse energy tested High current capability Extremely low thermal resis

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SS32B - SS310B SURFACE MOUNT SCHOTTKY BARRIER DIODES VOLTAGE RANGE: 20 - 100V CURRENT: 3.0 A Features For Surface Mounted Applications High Tem

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Ordering number :EN3240B 1SS351 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Series connection of 2 element

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LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diode Common Anode FEATURES z We declare that the material of product compliance with RoHS re

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TOSHIBA Diode Silicon Epitaxial Planar Type 1SS300 Ultra High Speed Switching Application 1SS300 Unit: mm  AEC-Q101 Qualified (Note1)  Small pack

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