SS3 Datasheet | Specifications & PDF Download

SMD Type Schottky Diodes SS32F-HF ~ SS320F-HF Diodes ■ Features ● Low power loss, high efficiency ● High forward surge current capability ● Reverse

Rating: 1 ★ (8 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS306 Ultra High Speed Switching Application  Small package : SC-61  Low forward voltage : VF (2) =

Rating: 1 ★ (8 votes)

Schottky Rectifier SS32 - S310 Description The SS32−S310 series includes a high−efficiency, low power loss, general−propose Schottky rectifiers. The c

Rating: 1 ★ (7 votes)

Schottky Barrier Diode FEATURES z Small surface mounting type. z Small package. z Low forward voltage:VF=0.23V(typ). Pb Lead-free Production specif

Rating: 1 ★ (7 votes)

NTSS3100 Low Forward Voltage, Low Leakage Trench-based Schottky Rectifier Features • Fine Lithography Trench−based Schottky Technology for Very Low F

Rating: 1 ★ (7 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS307 1SS307 General Puropose Rectifier Applications  Low forward voltage  Low reverse current  Sma

Rating: 1 ★ (6 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS336 Ultra High Speed Switching Application 1SS336 Unit: mm z Small package : SC-59 z Low forward vo

Rating: 1 ★ (6 votes)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS391 Low Voltage High Speed Switching  Low forward voltage: VF (2) = 0.23V (typ.)  Small pac

Rating: 1 ★ (6 votes)

® WON-TOP ELECTRONICS SS32 – SS310 3.0A SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Low Forward Voltage  Epitaxial Construction with Oxide

Rating: 1 ★ (6 votes)

SS32 - SS320 Taiwan Semiconductor 3A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES ● Low power loss, high efficiency ● Ideal for aut

Rating: 1 ★ (6 votes)

www.DataSheet4U.com SMD Schottky Barrier Rectifier SS32-G THRU SS310-G Forward Current: 3.0 Amp Reverse Votlage: 20 ~ 100 Volts Features Ideal for su

Rating: 1 ★ (6 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS301 Ultra High Speed Switching Application 1SS301 Unit: mm  AEC-Q101 Qualified (Note1)  Small pack

Rating: 1 ★ (5 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.)

Rating: 1 ★ (5 votes)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS322 Low Voltage High Speed Switching  Low forward voltage  Low reverse current  Small pac

Rating: 1 ★ (5 votes)

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching 1SS348 Unit: mm z Low forward voltage z Low reverse cu

Rating: 1 ★ (5 votes)

Ordering number :EN3240B 1SS351 Sillicon Epitaxial Schottky Barrier Diode UHF Detector, Mixer Applications Features · Series connection of 2 element

Rating: 1 ★ (5 votes)

NotNeRewcDoemsimgennsded for 1SS356 Band Switching Diodes 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 ●Outline VR 35 V Ct 1.2 pF rF 0.9 Ω 　 ●F

Rating: 1 ★ (5 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360 1SS360 Ultra High Speed Switching Application  AEC-Q101 Qualified (Note1)  Small package  L

Rating: 1 ★ (5 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS360F Ultra High Speed Switching Applications 1SS360F Unit in mm l Small package : 1608 Flat lead l

Rating: 1 ★ (5 votes)

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS368 Ultra High Speed Switching Application Small package Low forward voltage : VF (3) = 0.98V (typ.)

Rating: 1 ★ (5 votes)