ST-135 Datasheet | Specifications & PDF Download

Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 2SK1358 DESCRIPTION ·Drain Current –ID= 9A@ TC=25℃ ·Drain Source Vo

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A1354 High Precision 2-Wire Linear Hall Effect Sensor IC with Pulse Width Modulated Output Features and Benefits ▪ Designed for automotive, battery-p

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor August 2013 Features • Complement to BD136,

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1355 Advance Information 128 RGB x 160 Dot Matrix OLED/PLED Segment/Common Driver with Controller Thi

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Transistors 2SC1359 Silicon NPN epitaxial planar type For high-frequency amplification Complementary to 2SA0838 5.0±0.2 Unit: mm 4.0±0.2 5.1±0.2

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BP3135D High Precision PSR Constant Current LED Driver Description BP3135D is a high precision primary-side feedback and regulation controller for LE

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SOLOMON SYSTECH SEMICONDUCTOR TECHNICAL DATA SSD1351 Advance Information 128 RGB x 128 Dot Matrix OLED/PLED Segment/Common Driver with Controller Thi

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AOZ1356DI 5V/3.5A ECPower™ Protection Switch Supporting USB PD Fast Role Swap General Description The AOZ1356DI is a current-limiting protection swit

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DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification 1995 Sep 13 NXP Semiconductors NPN 7GHz wideband tran

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www.DataSheet4U.com 100 SERIES PRECISION POWER WIREWOUND RESISTORS SILICONE COATED 1/2 WATT TO 50 WATT RoHS Term.W is RoHS compliant & 260°C compati

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) BD135 BD137 BD1 39I MEDIUM POWER AMPLIFIER APPLICATIONS. FEATURES . Designed for Complementary Use with BD1

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BD135 / 137 / 139 — NPN Epitaxial Silicon Transistor BD135 / 137 / 139 NPN Epitaxial Silicon Transistor Features • Complement to BD136, BD138 and BD

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UTC1353 TV SOUND SYSTEM DESCRIPTION LI NEAR I NTEGRATED CI RCUI T The UTC1353 is a monolithic integrated circuit designed for the SIF and audio sect

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INCHANGE Semiconductor isc Silicon PNP Power Transistor DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(M

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isc Silicon NPN Power Transistor BD135 DESCRIPTION ·DC Current Gain- : hFE= 40(Min)@ IC= 0.15A ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)=

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