Schottk Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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Technical Data Data Sheet N1756, Rev. - 1N5817W-1N5819W SCHOTTKY BARRIER DIODE Features: • Metal silicon junction, majority carrier conduction • Guard

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R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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SN74LS74A Dual D-Type Positive Edge-Triggered Flip-Flop The SN74LS74A dual edge-triggered flip-flop utilizes Schottky TTL circuitry to produce high sp

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Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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SK12 SK115 SK12 SK115 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden Version 2017-01-26 ~ SMA / ~ DO-214AC 5± 0.2

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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ESAD83-004 (30A) (40V / 30A ) SCHOTTKY BARRIER DIODE Features Low VF Super high speed switching High reliability by planer design Outline drawings,

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SEMICONDUCTOR TECHNICAL DATA MBRD5U100D SCHOTTKY BARRIER TYPE DIODE SWITCHING MODE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. FEATUR

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PMBR5H150SS \ SR5H15 ULTRA LOW IR SCHOTTKY BARRIER RECTIFIERS Voltage 150 V Current 5A Features  Plastic package has Underwriters Laboratory Fl

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1 1.A 2.K 3.A 72  Available RoHS* COMPLIANT 1 1.A 2.K 3.A 72 ) VRRM IF(AV) IFSM EAS IRRM dv/dt TJ,TSTG VBR IR=10mA TA=25 VF IF=5A IF=1

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 150A Peak  Low Power

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Shenzhen Jingdao Electronic Co.,Ltd. TEL：0755-29799516 FAX：0755-29799515 Http://www.jdsemi.cn 16S45 * ： DC-DC * ： ， A1. K. A2. ：( Ta=25

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Schottky Barrier Rectifier STPS3045CT FEATURES ·Very small conduction losses ·Negligible switching losses ·High Current Capability, Low Forward Volt

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