Si-Schottky-Barrier Datasheet | Specifications & PDF Download

R SCHOTTKY BARRIER DIODE HBR2045 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 45 V 175 ℃ 0.6V （@Tj=125℃）   APPLICAT

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R SCHOTTKY BARRIER DIODE HBR10150S IF(AV) VRRM Tj VF(max) MAIN CHARACTERISTICS 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃）   APPLICATIONS 

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R SCHOTTKY BARRIER DIODE HBR3200 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 3A 200 V 175 ℃ 0.75V （@Tj=125℃）  、  APPLICATIONS  Low vol

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R SCHOTTKY BARRIER DIODE HBR2200 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 2A 200 V 175 ℃ 0.72V （@Tj=125℃）  、  APPLICATIONS

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R SCHOTTKY BARRIER DIODE HBR3150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 3A 150 V 175 ℃ 0.76V （@Tj=125℃）  、  APPLICATIONS

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DATA SHEET SR302 SERIES SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER VOLTAGE 20~150 Volts CURRENT 3.0 Ampere FEATURES z EXTREMELY LOW VF z UL 94V0 FLAME R

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D50065H Silicon Carbide Schottky Barrier Diode Features Applications VRRM=650V IF(TC=135℃ )=5

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R TRENCH SCHOTTKY BARRIER DIODE TPA4050S-2 MAIN CHARACTERISTICS IF(AV) VRRM TJmax IFSM VF(max)@20A 40A 50 V 200 ℃ 450 A 0.46V （@Tj=125℃） Pac

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R SCHOTTKY BARRIER DIODE HBR2040 MAIN CHARACTERISTICS IF(AV) VRRM Tj VF(max) 20（2×10）A 40 V 175 ℃ 0.6V （@Tj=125℃） z z APPLICATIONS z High f

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ShenZhen Hi-Semicon Electronics Co.,Ltd Datasheet SC3D20120D Silicon Carbide Schottky Barrier Diode Features Applications  1200-Vol t Schottky Re

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R SCHOTTKY BARRIER DIODE HBR20100 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 100 V 175 ℃ 0.7V （@Tj=125℃）   APPLIC

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R SCHOTTKY BARRIER DIODE MBR4060 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 40（2×20）A 60 V 150 ℃ 0.65V （@Tj=125℃）   APPLICATIO

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Datasheet SDS120J030G3 1200V/30A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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R SCHOTTKY BARRIER DIODE HBR5150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 5A 150 V 175 ℃ 0.75V （@Tj=125℃） l 、 l APPLICATIONS l

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Datasheet SDS120J040G2 1200V/40A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Tem

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R SCHOTTKY BARRIER DIODE HBR10150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 10（2×5）A 150 V 175 ℃ 0.72V （@Tj=125℃） z z APPLICATI

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MSS50,000 Series High Barrier Silicon Schottky Diodes Description The Aeroflex / Metelics MSS50,000 Series of Schottky diodes are fabricated on N-Type

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MSS50-xxx-x Series High Barrier Silicon Schottky Diodes Features  VF, RD and CJ Matching Options  Chip, Beam Lead and Packaged Devices  Hi-Rel Scre

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R SCHOTTKY BARRIER DIODE HBR20150 MAIN CHARACTERISTICS Package IF(AV) VRRM Tj VF(max) 20（2×10）A 150 V 175 ℃ 0.75V （@Tj=125℃） z z APPLICAT

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Datasheet SDS120J002D3 1200V/2A SiC Schottky Barrier Diode Characteristic ➢ Zero Reverse Recovery Current ➢ Positive temperature coefficient ➢ Temp

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