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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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2N2222 / 2N2222A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group acco

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SavantIC Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·Complement to type TIP42/42A/42B/42C APPLICATIONS ·For mediu

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2SK1618(L), 2SK1618(S) Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Lo

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ST 2SC828 / 828A NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. These transistors are subdivided into three grou

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IS31FL3218 18 CHANNELS LED DRIVER October 2020 GENERAL DESCRIPTION IS31FL3218 is comprised of 18 constant current channels each with independent PWM

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RBV25005-RBV2510 Silicon Bridge Rectifiers VOLTAGE RANGE: 50 --- 1000 V CURRENT: 25.0 A Features Rating to 1000V PRV Surge overload rating to 200 Am

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Features S2ABF THRU S2MBF Surface Mount General Purpose Silicon Rectifiers * For surface mounted applications * Low profile package * Glass Passiva

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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CZTA14 NPN CZTA64 PNP SURFACE MOUNT COMPLEMENTARY SILICON DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICO

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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SGT40N60NPFDPN_Datasheet 40A, 600V FIELD STOP IGBT DESCRIPTION SGT40N60NPFDPN using Field Stop IGBT technology, offer the optimum performance for indu

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SSF3338 www.DataSheet4U.com DESCRIPTION The SSF3338 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is

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www.DataSheet.co.kr Si5441BDC New Product Vishay Siliconix P-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.045 @ VGS = −4.5 V −2

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SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·The BD707 and BD71

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Silan Microelectronics SGT60N60FD1PN/P7/PS/PT_Datasheet 60A, 600V FIELD STOP IGBT DESCRIPTION SGT60N60FD1PN/P7/PS/PT adopts Field Stop IGBT technolog

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www.DataSheet4U.com DataShee DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com et4U.com DataSheet4U.com DataSheet4U.com

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Production specification Silicon Epitaxial Planar Transistor FEATURES  High Collector Current.(IC= 500mA).  Complementary To S8550. Pb Lead-free

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