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isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS

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MRA4001 - MRA4007 SURFACE MOUNT SILICON RECTIFIER DIODES VOLTAGE RANGE: 50 - 1000V CURRENT: 1.0 A Features Diffused junction For surface mounted

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CD40100BMS December 1992 CMOS 32-Stage Static Left/Right Shift Register Description CD40100BMS is a 32-Stage shift register containing 32 D-type mast

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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DISCONTINUED SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The

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DATA SHEET SILICON POWER MOS FET NE5511279A 7.5 V OPERATION SILICON RF POWER LD-MOS FET FOR UHF-BAND 10 W TRANSMISSION AMPLIFIERS DESCRIPTION The NE5

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( DataSheet : www.DataSheet4U.com ) www.DataSheet4U.com www.DataSheet4U.com

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74HC595D Features ● 8-bit serial input ● 8-bit serial or parallel output ● Tri-state output register ● Shift register with direct clear ● Shift outpu

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Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM

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CA139, CA139A, CA239, CA339, LM339, LM2901, LM3302 Data Sheet October 1999 File Number 795.6 Quad Voltage Comparators for Industrial, Commercial and

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CA139, CA139A, CA239, CA339, LM339, LM2901, LM3302 Data Sheet October 1999 File Number 795.6 Quad Voltage Comparators for Industrial, Commercial and

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LM321H/358H/324H 1MHZ High Voltage Bipolar Opamp Features  Single-Supply Operation from +3V ~ +36V  Dual-Supply Operation from ±1.5V ~ ±18V  Gain

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Silicon N-Channel Power MOSFET ○R CS150N03 A8 General Description： CS150N03 A8, the silicon N-channel Enhanced VDMOSFETs, is obtained by advanced tr

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LM321H/358H/324H 1MHZ High Voltage Bipolar Opamp Features  Single-Supply Operation from +3V ~ +36V  Dual-Supply Operation from ±1.5V ~ ±18V  Gain

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LM321H/358H/324H 1MHZ High Voltage Bipolar Opamp Features  Single-Supply Operation from +3V ~ +36V  Dual-Supply Operation from ±1.5V ~ ±18V  Gain

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HRW0202B Silicon Schottky Barrier Diode for Rectifying ADE-208-345A (Z) Rev 1 Oct. 1997 Features • Low forward voltage drop and suitable for high eff

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