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SILICON MICROSTRUCTURES INCORPORATED www.DataSheet4U.com SM5501/SM5502 Standard Pressure, Constant Current Standard Pressure, Constant Voltage • OE

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DX3522 Product Description DX3522 LED  BUCK/BUCK BOOST   120VAC/230VAC  (<15uA)  (PF>0.9)   SOIC-7/DIP-7    (//）    DX352

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Low Pressure Digital Sensor SM4291-HGC-S-300-000 Gauge Pressure Sensor FEATURES • Pressure range of 0 to 300 mm Hg (0-5.8 PSI) gauge output • Digital

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Low Pressure Digital Sensor SM7221, SM7321, SM7421 Series Gauge & Differential Pressure Sensors FEATURES • Pressure ranges from 0.15 to 0.29 psi; gaug

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New Generation EXview HAD CCD Ultrahigh-Sensitivity Near Infrared Structure Diagonal 6 mm (Type 1/3) 380K/440K-Effective Pixel CCD Image Sensors ICX6

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HR-CR7 RoHS 대응품 Slim 1a, 10A High isolation structure Relay 특징 - 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V 연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량

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0.0030 • All dimensions in inches • MSL = 3 Note: 0.0393 0.1023 0.0326 0.1098 87 65 0.0299 12 34 0.1023±0.051 0.1023 0.0393 0.0326 0.09173

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Add-on Structure Contact Image Sensor Heads LSH6008-CA50A The Basic CIS by which the add-on can shorten the development period of a product sharply wh

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Low Pressure Digital & Analog Sensor SM5291, SM5391, SM5491 Gauge and Differential Pressure Sensor DESCRIPTION The SM5X91 series are a low pressure M

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Freescale Semiconductor Application Note Document Number: AN3334 Rev. 0, 11/2006 Data Structures for RS08 Microcontrollers by: Inga Harris 8-bit Mic

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POW-R-PAK: Flexible, Integrated IGBT Power Structures The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converte

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HR-CR7 RoHS 대응품 Slim 1a, 10A High isolation structure Relay 특징 - 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V 연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량

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HR-CR7 RoHS 대응품 Slim 1a, 10A High isolation structure Relay 특징 - 절연벽 구조로 Noise에 강함 - 접점과 코일 사이에 높은 절연 저항 : 10,000V 연면거리 및 공간거리 : 6mm - 높은 유입 전류 용량

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Low Pressure Digital Sensor SM7231, SM7331, SM7431 Gauge and Differential Pressure Sensor DESCRIPTION The SM7X31 series are a low pressure MEMS senso

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DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays November 1999 s s –––––––––

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POW-R-PAK: Flexible, Integrated IGBT Power Structures The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converte

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PQRT8A06 \ QRT8A06F \ QRT8A06D \ QDT8A06S PLANAR STRUCTURED SUPERFAST RECOVERY RECTIFIERS Voltage 600 V Current 8A QRT8A06 TO-220AC Features 

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GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic dis

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DATA SHEET O K I A S I C P R O D U C T S MG113P/114P/115P/73P/74P/75P 0.25µm Sea of Gates and Customer Structured Arrays November 1999 s s –––––––––

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DATA SHEET O K I A S I C P R O D U C T S MG63P/64P/65P 0.25µm Embedded DRAM/ Customer Structured Arrays November 1998 MG63P/64P/65P 0.25µm Embedded

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