T65 Datasheet | Specifications & PDF Download

MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation MBQ60T65PES High Speed Fieldstop Trench IGBT Second Generation General Description Th

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MBQ50T65FESC 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provi

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Public IGLT65R055B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bi‑directional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional S

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® RT6575C/D Dual-Channel Synchronous DC-DC Step-Down Controller with 5V/3.3V LDOs General Description The RT6575C/D is a dual-channel step-down cont

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TO-247-3 NGW50T65M3DFP 650 V, 50 A trench field-stop IGBT with full rated silicon diode Rev. 1.1 — 7 March 2025 Product data sheet 1. General des

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CRG75T65AK5HD CRG75T65AK5HD FS IGBT ， ，。 RoHS 。 ● FS ， ； ● ：VCE(sat),TYP=1.65V @IC=75A,VGE=15V ； ● ； VCES 650 V IC 75 A Ptot （TC=25℃）

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Public IMLT65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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Public IMT65R015M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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Public IGLT65R110B2 Preliminary datasheet CoolGaN™ BDS 650 V G5 CoolGaN™ Bidirectional switch, enhancement‑mode Infineon's CoolGaN™ Bi‑Directional Sw

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MT6580 WCDMA Smartphone SoC Application Processor Technical Brief Version: Release date: 1.0 2015-04-15 Specifications are subject to change withou

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Public IMLT65R033M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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NGW75T65M3DFP 650 V, 75 A trench field-stop IGBT with full rated silicon diode Rev. 1 — 17 January 2025 Product data sheet 1. General description

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MBQ40T65QES 650V Field Stop IGBT General Description This IGBT is produced using advanced Magnachip’s Field Stop Trench IGBT Technology, which provid

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WSJT65R028DW Super-Junction Power MOSFET Rev.01 - 12 December 2024 Product data sheet 1. General description WSJT65R028DW is a high voltage N-channe

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AT6558R-5300 BDS/GNSS SOC AT6558R-5300 BDS/GNSS SOC AT6558R-5300 BDS/GNSS SOC DS-AT6558-R-5300 1.0 ，。 www.icofchina.com 1 /

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FEATURES  LCD drive output: Common output: 4, Segment output : 49  Integrated Display data RAM (DDRAM): RAM:49x4 bit  Integrated 3ch LED driver cir

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Silan Microelectronics SGT75T65SDM1P4_Datasheet 75A, 650V FIELD STOP IGBT DESCRIPTION SGT75T65SDM1P4 adopts Field Stop III IGBT technology, offer th

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® RT6575A/B Dual-Channel Synchronous DC-DC Step-Down Controller with 5V/3.3V LDOs General Description The RT6575A/B is a dual-channel step-down cont

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Public IMT65R040M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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Public IMT65R026M2H Final datasheet SiC MOSFET CoolSiC™ MOSFET 650 V G2 Built on Infineon’s robust 2nd generation Silicon Carbide trench technology,

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