TD08 Datasheet | Specifications & PDF Download

Features • Uses CRM advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according to JEDE

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() Features • Uses CRM(CQ) advanced Trench technology • Extremely low on-resistance RDS(on) • Excellent QgxRDS(on) product(FOM) • Qualified according

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Product  Specification SPECIFICATION FOR APPROVAL LB070WV6 Liquid  Crystal  Display ( ) Preliminary  Specification ( ● ) Final  Specification Title

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LB070WV1 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ( ) Preliminary Specification Final Specification (●) Title BU

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Silicon N-Channel Power MOSFET CRTD080N04L2-G General Description： CRTD080N04L2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high

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NTD HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS DIFFUSED SILICON JUNCTIONS PRV 8,000 TO 60,000 VOLTS AVALANCHE CHARACTERISTICS LOW LEAKAGE Peak EDI

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LB043WQ2 Liquid Crystal Display Product Specification SPECIFICATION FOR APPROVAL ) Preliminary Specification (●) Final Specification ( Title BUYER

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Silicon N-Channel Power MOSFET CRTD080N02U2-G General Description： CRTD080N02U2-G, the silicon N-channel Enhanced VDMOSFETs, is obtained by the high

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.5 dB Typical Gain @ 0.1 GHz 18.5 dB T

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SPECIFICATIONS FOR LED DISPLAYS 20.32mm(0.80 ) Seven Segments Triple Digit LTD080 -10 Series WENRUN OPTOELECTRONIC WENRUN LED Displays LTD080 Feature

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SJTD08N60C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 600V Lead Free Package and Finish RDS(ON)(Typ.) 0.45Ω ID 8A Featu

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SPECIFICATIONS FOR LED DISPLAYS 20.32mm(0.80 ) Seven Segments Triple Digit LTD080 -10 Series WENRUN OPTOELECTRONIC WENRUN LED Displays LTD080 Feature

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SJTD08N65C Super-Junction MOSFET Applications: ● Adaptor ● Charger ● SMPS VDSS 650V Lead Free Package and Finish RDS(ON)(Typ.) 0.56Ω ID 8A Featu

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Silicon N-Channel Power MOSFET CRTD080P04L2P General Description： CRTD080P04L2P, the silicon P-channel Enhanced VDMOSFETs, is obtained by the high de

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CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/14 N- AND P-Channel Enhancement Mode MOSFET MTD080

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.5 dB Typical Gain @ 0.1 GHz 18.5 dB T

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M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.5 dB Typical Gain @ 0.1 GHz 18.5 dB T

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www.DataSheet.co.kr Toshiba Matsushita Display Technology Co., Ltd. PRODUCT INFORMATION 22.6cm COLOUR TFT-LCD MODULE (8.9 TYPE) LTD089EXWS (p-Si TF

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SPECIFICATIONS FOR LED DISPLAYS 20.32mm(0.80 ) Seven Segments Triple Digit LTD080 -10 Series WENRUN OPTOELECTRONIC WENRUN LED Displays LTD080 Feature

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N-Channel MOSFET Applications: ● Adaptor ● Charger ● SMPS Features: ● RoHS Compliant ● Low ON Resistance ● Low Gate Charge ● Peak Current vs Pulse Wi

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