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MTD080C10H8 P- & N-Channel Enhancement Mode Power MOSFET

MTD080C10H8 Description

CYStech Electronics Corp.Spec.No.: C703H8 Issued Date : 2016.11.28 Revised Date : Page No.: 1/14 N- AND P-Channel Enhancement Mode MOSFET MTD080.

MTD080C10H8 Features

* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -

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Datasheet Details

Part number
MTD080C10H8
Manufacturer
Cystech Electonics
File Size
661.26 KB
Datasheet
MTD080C10H8-CystechElectonics.pdf
Description
P- & N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET Cystech Electonics
Cystech Electonics MTD080C10H8-like datasheet