* Simple drive requirement
* Low on-resistance
* Fast switching speed
* Pb-free lead plating and halogen-free package BVDSS ID@VGS=10V(-10V), TA=25°C ID@VGS=10V(-10V), TC=25°C RDSON(typ)@VGS=10V(-10V) RDSON(typ)@VGS=4.5V(-4.5V) N-CH 100V 3.6A 10.4A 74mΩ 82mΩ P-CH -
MTD080C10H8 Datasheet (661.26 KB)
MTD080C10H8
Cystech Electonics
661.26 KB
P- & n-channel enhancement mode power mosfet.
CYStech Electronics Corp. Spec. No. : C703H8 Issued Date : 2016.11.28 Revised Date : Page No. : 1/14 N- AND P-Channel Enhancement Mode MOSFET MTD080.
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