HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DE.
TRinno
TGAN20N135FD - Field Stop Trench IGBT
Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio.
TRinno
TGAN30N135FD1 - Field Stop Trench IGBT
Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati.
TriQuint Semiconductor
TGA1135B - 18-27.5 GHz 1W Power Amplifier
Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23G.
ON Semiconductor
BD135TG - Plastic Medium-Power Silicon NPN Transistors
BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use.
Din-Tek
DTGT15N135 - Field Stop Trench IGBTs
General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such.
Din-Tek
DTGT25N135 - Field Stop Trench IGBTs
General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switchin.
Din-Tek
DTGT30N135 - Field Stop Trench IGBTs
General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switchin.
Clare Inc
TG-135 - HIGH ENERGY SPARK GAP DEVICES
HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require .
TriQuint Semiconductor
TGF1350 - Discrete MESFET
Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated G.
TriQuint Semiconductor
TGF1350-SCC - Discrete MESFET
Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated G.
TriQuint Semiconductor
TGA1135B-SCC - 18-27 GHz 1W Power Amplifier
Product Datasheet February 14, 2008 18-27 GHz 1W Power Amplifier Key Features • • • • • • • TGA1135B-SCC 0.25 um pHEMT Technology 14 dB Nominal Gain.
STMicroelectronics
STGWA35IH135DF2 - IGBT
STGWA35IH135DF2 Datasheet Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT in a TO-247 long leads package TO-247 long leads C(2, T.
STMicroelectronics
STGWA25IH135DF2 - IGBT
STGWA25IH135DF2 Datasheet Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT in a TO-247 long leads package TO-247 long leads C(2, T.
