TG-135 Datasheet | Specifications & PDF Download

Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23G

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Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated G

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Features: •1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operatio

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Product Datasheet February 14, 2008 18-27 GHz 1W Power Amplifier Key Features • • • • • • • TGA1135B-SCC 0.25 um pHEMT Technology 14 dB Nominal Gain

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General Description Din-Tek IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switchin

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General Description Din-Tek Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switchin

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HIGH ENERGY SPARK GAP DEVICES TG Legacy Series DESCRIPTION CP Clare’s TG Legacy Series of two electrode sparkgaps excel in applications that require

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Product Data Sheet Discrete MESFET TGF1350-SCC Key Features and Performance • • • • • 0.5 um x 300 um FET 1.5 dB Noise Figure with 11dB Associated G

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Features: • 1350V Field Stop Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy Parallel Operati

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BD135G, BD137G, BD139G Plastic Medium-Power Silicon NPN Transistors This series of plastic, medium−power silicon NPN transistors are designed for use

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STGWA35IH135DF2 Datasheet Trench gate field-stop 1350 V, 35 A, soft-switching IH2 series IGBT in a TO-247 long leads package TO-247 long leads C(2, T

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STGWA25IH135DF2 Datasheet Trench gate field-stop 1350 V, 25 A, soft-switching IH2 series IGBT in a TO-247 long leads package TO-247 long leads C(2, T

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