TGA1135B Datasheet - TriQuint Semiconductor

TGA1135B - 18-27.5 GHz 1W Power Amplifier

TGA1135B Features

* 0.25 um pHEMT Technology

* 14 dB Nominal Gain at 23GHz

* 30 dBm Nominal P1dB

* 38dBm OTOI typical

* Typical 15dB Input/Output RL

* Bias 6 - 7V @ 540 mA

* On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications

Datasheet Details

TGA1135B

TriQuint Semiconductor

1.37 MB

18-27.5 ghz 1w power amplifier.

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