TGD Datasheet | Specifications & PDF Download

Free Datasheet http://www.nDatasheet.com Taiwan Goodark Technology Co.,Ltd 、 300mA CMOS LN1134 http://www.goodark.asia Free Datasheet http:

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Taiwan Goodark Technology Co.,Ltd B426-AB1510 Revision History Version 0.10 0.20 Change Summary Created Update Bluetooth Specification Version Dat

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Taiwan Goodark Technology Co.,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to

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www.DataSheet4U.com STGD3NB60HD N-CHANNEL 6A - 600V - DPAK PowerMESH™ IGBT TYPE STGD3NB60HD s s s s s VCES 600 V VCE(sat) (Max) @25°C < 2.8 V IC @

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NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate C

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Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to

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ZL60212 880 nm High-Performance Single-chip DUPLEX Data Sheet May 2004 Ordering Information ZL60212TBD TO-46 Package with lens ZL60212TDD ST Housing

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NTGD4161P Power MOSFET −30 V, −2.3 A, Dual P−Channel, TSOP−6 Features • • • • • Fast Switching Speed Low Gate Charge Low RDS(on) Independently Conne

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Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

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Topstek Current Transducer TGD3A .. TGD40A TGD 3A~50A Features i Highly reliable Hall Effect device i Compact and light weight, Two sensors in one pac

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NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 30 V, +2.9/-2.2 A Features • Complementary N−Channel and P−Channel MOSFET • Small Size (3 x 3

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Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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RQK0204TGDQA Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 100 mΩ typ (VGS = 4.5 V, ID = 1.2 A) • Low drive current

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INTEGRATED CIRCUITS SA5778 Serial triple gauge driver (STGD) Product specification Supersedes data of 1997 May 27 IC18 Data Handbook 1998 Apr 03 Phi

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INTEGRATED CIRCUITS SA5778 Serial triple gauge driver (STGD) Product specification Supersedes data of 1997 May 27 IC18 Data Handbook 1998 Apr 03 Phi

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NTGD4169F Power MOSFET and Schottky Diode Features 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Cha

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NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (

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