TGD Datasheet | Specifications & PDF Download

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to

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Taiwan Goodark Technology Co.,Ltd 2SC4115 http://www.goodark.asia Taiwan Goodark Technology Co.,Ltd 2SC4115 Typical Characteristics http://www.goodar

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Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

Rating: 1 ★ (3 votes)

Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

Rating: 1 ★ (3 votes)

Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

Rating: 1 ★ (3 votes)

Taiwan Goodark Technology Co.,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and

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STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES

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7$% 7$% ,3$.     72  STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr

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Taiwan Goodark Technology Co.,Ltd B426-AB1510 Revision History Version 0.10 0.20 Change Summary Created Update Bluetooth Specification Version Dat

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STGP3NB60S STGD3NB60S N-CHANNEL 3A - 600V - TO-220 / DPAK PowerMESH™ IGBT TYPE STGP3NB60S STGD3NB60S s s s s VCES 600 V 600 V VCE(sat) < 1.5 V < 1.5

Rating: 1 ★ (3 votes)

STGD7NB60H N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT TYPE STD7NB60H s s s s s s s s VCES 600 V VCE(sat) < 2.8 V IC 7A s HIGH INPUT IMPEDANCE LOW

Rating: 1 ★ (3 votes)

® STGD7NB120S-1 N-CHANNEL 7A - 1200V IPAK Power MESH™ IGBT PRELIMINARY DATA T YPE STGD7NB120S-1 s V CES 1200 V V CE(sat) < 2.1 V IC 7 A s s s H

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www.DataSheet4U.com STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESH™ IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD6NC60HDT4

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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STGD3NC120H 7 A, 1200 V very fast IGBT Features ■ High voltage capability ■ High speed Applications ■ Home appliance ■ Lighting Description This dev

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Rating: 1 ★ (3 votes)

Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

Rating: 1 ★ (2 votes)

Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

Rating: 1 ★ (2 votes)

Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

Rating: 1 ★ (2 votes)

Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to

Rating: 1 ★ (2 votes)