TGD Datasheet | Specifications & PDF Download

Taiwan Goodark Technology Co.,Ltd B426-AB1510 Revision History Version 0.10 0.20 Change Summary Created Update Bluetooth Specification Version Dat

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Free Datasheet http://www.nDatasheet.com Taiwan Goodark Technology Co.,Ltd 、 300mA CMOS LN1134 http://www.goodark.asia Free Datasheet http:

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Taiwan Goodark Technology Co.,Ltd TGD N-Channel Enhancement Mode Power MOSFET Description The TGD30H10K uses advanced trench technology and design to

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TGD30N40P Features: • 400V Trench Technology • High Speed Switching • Low Conduction Loss • Positive Temperature Coefficient • Easy parallel Operatio

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Taiwan Goodark Technology Co.,Ltd TGD40H12K TGD N-Channel Enhancement Mode Power MOSFET Description The TGD40H12K uses advanced trench technology and

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NTGD4161P Power MOSFET −30 V, −2.3 A, Dual P−Channel, TSOP−6 Features • • • • • Fast Switching Speed Low Gate Charge Low RDS(on) Independently Conne

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NTGD3147F Power MOSFET and Schottky Diode Features −20 V, −2.5 A, P−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate C

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www.DataSheet4U.com STGD3HF60HD 3 A, 600 V very fast IGBT Preliminary data Features ■ ■ ■ Minimal tail current Low conduction and switching losses

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MOSFET - Power, P-Channel, Load Switch with Level-Shift, TSOP-6 8 V, +3.3 A NTGD1100L The NTGD1100L integrates a P and N−Channel MOSFET in a single p

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STGD10HF60KD Automotive-grade 10 A, 600 V, short-circuit rugged IGBT with Ultrafast diode Datasheet - production data TAB 3 1 DPAK Features • Desig

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STGB10NC60KD, STGD10NC60KD STGF10NC60KD, STGP10NC60KD 10 A, 600 V short-circuit rugged IGBT Features ■ Lower on voltage drop (VCE(sat)) ■ Lower CRES

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www.DataSheet4U.com STGB10NC60K - STGD10NC60K STGP10NC60K N-channel 600V - 10A - D2PAK / TO-220 / DPAK Short circuit rated PowerMESH™ IGBT General fe

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NTGD3148N Power MOSFET 20 V, 3.5 A, Dual N-Channel, TSOP-6 Features •ăLow Threshold Levels, VGS(th) < 1.5 V •ăLow Gate Charge (3.8 nC) •ăLeading Edge

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NTGD3149C Complementary, 20 V, +3.5/−2.7 A, TSOP−6 Dual Features Power MOSFET • • • • • • Complementary N−Channel and P−Channel MOSFET Small Size (

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www.DataSheet4U.com NTGD3133P Power MOSFET −20 V, −2.5 A, P−Channel, TSOP−6 Dual Features • • • • • • • • • Reduced Gate Charge for Fast Switching

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NTGD4169F Power MOSFET and Schottky Diode Features 30 V, 2.9 A, N−Channel with Schottky Barrier Diode, TSOP−6 • • • • • • Fast Switching Low Gate Cha

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NTGD4167C MOSFET – POWER, Dual, Complementary, TSOP-6 30 V, +2.9/-2.2 A Features • Complementary N−Channel and P−Channel MOSFET • Small Size (3 x 3

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Topstek Current Transducer TGA3A .. TGA40A TGD3A~40A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight, Two sensors in one pa

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® STGD3NB60SD N-CHANNEL 3A - 600V DPAK Power MESH™ IGBT PRELIMINARY DATA TYPE STGD3NB60SD s VCES 600 V V CE(sat) < 1.5 V IC 3A s s s s s HIGH I

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www.DataSheet4U.com STGD10NC60S STGP10NC60S 10 A - 600 V fast IGBT Features ■ ■ ■ Very low on-voltage drop (VCE(sat)) Minimum power losses at 5 kHz

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