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STGD18N40LZ, STGB18N40LZT4 Datasheet - STMicroelectronics

STGD18N40LZ - Automotive-grade 390V internally clamped IGBT

This application-specific IGBT utilizes the most advanced PowerMESH™ technology.

The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities.

The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys

STGD18N40LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pul

STGB18N40LZT4-STMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: STGD18N40LZ, STGB18N40LZT4. Please refer to the document for exact specifications by model.
STGD18N40LZ Datasheet Preview Page 2 STGD18N40LZ Datasheet Preview Page 3

Datasheet Details

Part number:

STGD18N40LZ, STGB18N40LZT4

Manufacturer:

STMicroelectronics ↗

File Size:

571.26 KB

Description:

Automotive-grade 390v internally clamped igbt.

Note:

This datasheet PDF includes multiple part numbers: STGD18N40LZ, STGB18N40LZT4.
Please refer to the document for exact specifications by model.

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