STGD18N40LZ

Automotive-grade 390V internally clamped IGBT

STMicroelectronics

STGD18N40LZ Features

* Designed for automotive applications and AEC-Q101 qualified

* 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH

* ESD gate-emitter protection

* Gate-collector high voltage clamping

* Logic level gate drive

* Low saturation voltage

* High pul

STGD18N40LZ General Description

This application-specific IGBT utilizes the most advanced PowerMESH™ technology. The built-in Zener diodes between gate-collector and gateemitter provide overvoltage protection capabilities. The device also exhibits low on-state voltage drop and low threshold drive for use in automotive ignition sys.

STGD18N40LZ Datasheet (571.26 KB)

STGD18N40LZ Datasheet Preview — Preview of STGD18N40LZ PDF

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STGD18N40LZ

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STMicroelectronics ↗

File Size:

571.26 KB

Description:

Automotive-grade 390v internally clamped igbt.
7$% 7$% ,3$. 72 STGB18N40LZT4, STGD18N40LZ, STGP18N40LZ Automotive-grade 390 V internally clamped IGBT ESCIS 180 mJ Datasheet - pr.

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STGD18N40LZ Automotive-grade 390V internally clamped IGBT STMicroelectronics

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STGD18N40LZ Features

STGD18N40LZ General Description

Datasheet Details

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