TH8 Datasheet | Specifications & PDF Download

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CYStech Electronics Corp. Spec. No. : C709H8 Issued Date : 2014.04.30 Revised Date : Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOS

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1.8 Size 86mm High Torque Hybrid Stepping Motor General Specification for High Torque Hybrid Stepping Motor Item Step Angle Step Angle Accuracy Resi

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBTH81LT1/D UHF/VHF Transistor MMBTH81LT1 COLLECTOR 3 1 BASE 2 EMITTER 1 Motorola Pr

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PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A

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PNP RF Transistor MMBTH81 This device is designed for general RF amplifier and mixer applications to 250 MHz with collector currents in the 1.0 mA to

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CYStech Electronics Corp. Spec. No. : C948H8 Issued Date : 2014.06.06 Revised Date : 2019.11.05 Page No. : 1/9 N-Channel Logic Level Enhancement Mod

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MPSH81 / MMBTH81 Discrete POWER & Signal Technologies MPSH81 MMBTH81 C E C E TO-92 B SOT-23 Mark: 3D B PNP RF Transistor This device is design

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isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 24mΩ@VGS=10V ·Fully characterized avalanche voltage and curre

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Preliminary Technical Information Trench Gate Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH86N25T IXTQ86N25T IXTV86N25T VDSS = ID25

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Green DMTH8012LPSW 80V +175°C N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 (SWP) (Type Q) Product Summary BVDSS 80V RDS(ON) 17mΩ @ VGS = 10V 2

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Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 8P50 IXTT 8P50 VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω Symbol VDSS VDGR VGS

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LinearTM Power MOSFET w/ Extended FBSOA Advance Technical Information IXTT80N20L IXTH80N20L VDSS = 200V ID25 = 80A ≤RDS(on) 32mΩ N-Channel Enhance

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