PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTH 88N30P IXTK 88N30P IXTQ 88N30P IXTT 88N30P V DSS ID25 RDS(on) = 300 V = 88 A ≤ 40 mΩ TO-247 (IXTH) Symbol VDSS V DGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25° C to 150° C T J = 25° C to 150° C; R GS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I
Datasheet Details
Part number:
IXTH88N30P
Manufacturer:
IXYS
File Size:
365.07 KB
Description:
Polarht power mosfet.