IXTH88N15 Datasheet - IXYS Corporation

IXTH88N15 High Current Power MOSFET

www.DataSheet4U.com Advance Technical Information High Current Power MOSFET N-Channel Enhancement Mode IXTH 88N15 IXTT 88N15 V DSS I D25 RDS(on) = = = 150 V 88 A 22 mΩ Symbol V DSS V DGR VGS VGSM I D25 I DM I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C M.

IXTH88N15 Features

* z z z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 1.13/10 Nm/lb.in. 6 4 g g z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and

IXTH88N15_IXYSCorporation.pdf