* z z z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 AD TO-268 300 1.13/10 Nm/lb.in. 6 4 g g z International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and
IXTH88N15 Datasheet (140.86 KB)
IXTH88N15
IXYS Corporation
140.86 KB
High current power mosfet.
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Advance Technical Information
High Current Power MOSFET
N-Channel Enhancement Mode
IXTH 88N15 IXTT 88N15
V DSS I D25
RDS(on)
.
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