* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (
IXTH8P50 Datasheet (563.73 KB)
IXTH8P50
IXYS Corporation
563.73 KB
P-channel mosfet.
Standard Power
MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH 8P50 IXTT 8P50
VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω
Symbol VDSS VDGR VGS.
📁 Related Datasheet
IXTH80N075L2 Power MOSFET (IXYS)
IXTH80N075L2 N-Channel MOSFET (INCHANGE)
IXTH80N20L Power MOSFET (IXYS)
IXTH80N20L N-Channel MOSFET (INCHANGE)
IXTH80N65X2 Power MOSFET (IXYS)
IXTH86N25T N-Channel MOSFET (INCHANGE)
IXTH86N25T Power MOSFET (IXYS)
IXTH88N15 High Current Power MOSFET (IXYS Corporation)
IXTH88N15 N-Channel MOSFET (INCHANGE)
IXTH88N30P PolarHT Power MOSFET (IXYS)
