* z Fast Intrinsic Diode z Low Package Inductance Advantages z Easy to Mount z Space Savings Applications z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2013 IXYS CORPORATION, All Rights Reserved DS100187E(04/13) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specifie
IXTH02N250 Datasheet (195.82 KB)
IXTH02N250
IXYS
195.82 KB
High voltage power mosfets.
High Voltage Power MOSFETs
IXTH02N250 IXTV02N250S
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-247 .
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