IXTH03N400 High Voltage Power MOSFETs

IXYS

Description

High Voltage Power MOSFETs Preliminary Technical Information IXTH03N400 IXTV03N400S VDSS = ID25 = ≤ RDS(on) 4000V 300mA 290Ω N-Channel Enhancemen.

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Datasheet Specifications

Part number: IXTH03N400
Manufacturer: IXYS
File Size: 181.16 KB
Datasheet: IXTH03N400-IXYS.pdf
Description: High Voltage Power MOSFETs

Applications

* z High Voltage Power Supplies z Capacitor Discharge z Pulse Circuits © 2012 IXYS CORPORATION, All Rights Reserved DS100214A(04/12) Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs VDS = 50V, ID = 100mA, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f = 1MHz td(on) tr td(off)

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IXTH03N400 High Voltage Power MOSFETs IXYS

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