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IXTH80N65X2 Datasheet - IXYS

IXTH80N65X2 - Power MOSFET

X2-Class Power MOSFET IXTH80N65X2 N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 =  RDS(on) 650V 80A 38m TO-247 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque

IXTH80N65X2 Features

* International Standard Package

* Low RDS(ON) and QG

* Avalanche Rated

* Low Package Inductance Advantages

* High Power Density

* Easy to Mount

* Space Savings Applications

* Switch-Mode and Resonant-Mode Power Supplies

* DC-DC Converters

* PFC Circuits

IXTH80N65X2-IXYS.pdf

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Datasheet Details

Part number:

IXTH80N65X2

Manufacturer:

IXYS

File Size:

174.12 KB

Description:

Power mosfet.

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IXTH80N65X2 Power MOSFET IXYS