TK12 Datasheet | Specifications & PDF Download

TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-re

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www.DataSheet4U.com TK12A60U TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOSⅡ) TK12A60U Switching Regulator Applications • • • •

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MOSFETs Silicon N-Channel MOS (π-MOS) TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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TK12A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A60D Switching Regulator Applications Ф3.2 ± 0.2 10 ± 0.3 Unit: mm

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isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 150V(Min) ·Static drain-source on-resistance : RDS(on) ≤ 15mΩ@VGS=10V ·100%

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SERVICE MANUAL LMU-TK12AS(SS) INDUSTRIAL MONITOR PRODUCT CODE No. LMU-TK12AS/SS LMU-TK12AS(K)/SS LMU-TK12ASTR/SS LMU-TK12ASTR(K)/SS LMU-TK12ASTR(K)/UK

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PolarHTTM Power MOSFET IXTK 120N20P IXTQ 120N20P N-Channel Enhancement Mode Avalanche Rated VDSS = ID25 = RDS(on) ≤ 200 V 120 A 22 m Ω TO-264 (IX

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PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXTK120N25P Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dV

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK12A60W,ITK12A60W ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.265Ω (typ.) ·Easy t

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Preliminary Technical Information X2-Class Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTK120N65X2 IXTX120N65X2 VDSS = ID25 = RDS(on)

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TK12A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A50D Switching Regulator Applications • • • • Low drain-source ON-re

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MOSFETs Silicon N-Channel MOS (DTMOS) TK12A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON)

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N-Channel 120 V (D-S) 175 °C MOSFET DTK120N12 www.din-tek.jp PRODUCT SUMMARY VDS (V) 120 RDS(on) (Ω) 0.0075 at VGS = 10 V TO-263 ID (A) 128a FE

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Topstek Current Transducer TK3A .. TK50A TK 3A~50A Features ♦ Highly reliable Hall Effect device ♦ Compact and light weight ♦ Fast response time ♦ E

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TK12A45D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK12A45D Switching Regulator Applications • Low drain-source ON-resista

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High Current MegaMOSTMFET N-Channel Enhancement Mode Preliminary Data Sheet IXTK 120N25 VDSS = ID25 = = RDS(on) 250 V 120 A 20 mΩ Symbol Test c

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Advance Technical Information www.DataSheet4U.com High Current Mega MOSTMFET N-Channel Enhancement Mode IXTK 128N15 VDSS ID25 RDS(on) = 150 V = 12

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TK12 TK12 Phase Control Thyristor Advance Information Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001 FEATURES s High Surge Capabilit

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iscN-Channel MOSFET Transistor TK12A50D ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 0.52Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10

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TK12 TK12 Phase Control Thyristor Advance Information Replaces January 2000 version, DS4252-4.0 DS4252-5.0 July 2001 FEATURES s High Surge Capabilit

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