TS2012 Datasheet | Specifications & PDF Download

ATS2012UV365 2.0 x 1.25 mm UV LED With Ceramic Substrate FEATURES 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Low power consumption Wide viewing angle

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ATS2012UV415 2.0 x 1.25 mm UV LED With Ceramic Substrate FEATURES 2.0 mm x 1.25 mm SMD LED, 0.75 mm thickness Low power consumption Wide viewing angle

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Ordering number:ENN6360 N-Channel Silicon MOSFET FTS2012 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting

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TS2012 Filter-free stereo 2x2.8 W class D audio power amplifier 300k 300k 18 AGND TS2012 - QFN20 (4x4 mm) Pin connections (top view) 20 19 18 17

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                                                                                    SSTS20120/SSTS20120F Main Product Characteristics: IF VRRM Tj(ma

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N-Channel 20 V (D-S) MOSFET DTS2012 www.din-tek.jp PRODUCT SUMMARY VDS (V) 20 RDS(on) () 0.037 at VGS = 4.5 V 0.041 at VGS = 2.5 V 0.046 at VGS =

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                                                                                    SSTS20120/SSTS20120F Main Product Characteristics: IF VRRM Tj(ma

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