TSM12 Datasheet | Specifications & PDF Download

ADSemiconductor® TSM12 (12-CH Auto Sensitivity Calibration Capacitive Touch Sensor) TSM12 12-CH Auto Sensitivity Calibration Capacitive Touch Sensor S

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TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.7mΩ FEATURES ● Low RDS(ON) to minimize conductive loss ● Low gate charge for f

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

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TSM121 SINGLE CHIP PWM & HOUSEKEEPING IC FOR HALF BRIDGE SMPS s HOUSEKEEPING CIRCUIT : s Over voltage protection for 3.3V, 5V and 12V s Additional Ove

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TSM120N06LCR Taiwan Semiconductor N-Channel Power MOSFET 60V, 54A, 12mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gat

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TSM120N06LCP Taiwan Semiconductor N-Channel Power MOSFET 60V, 70A, 12mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gat

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TSM12N02 20V N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 20 30 @ VGS = 10V 40 @ VGS = 4.5V TO-252 Pin Definition: 1. Gate 2. Drain 3. Sourc

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

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ShenZhen Magnetic Cube Technology Co., LTD. TSM SERIES ® Part numbering system ◎ All test Data is referenced to 25℃ ambient. ◎ Operating tempera

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TSM126 N-Channel Depletion-Mode MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(Ω)(max) 600 700 @ VGS =

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TSM120N10PQ56 100V N-Channel MOSFET PDFN56 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain Key Param

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

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TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A

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TSM1285 A 300ksps, Single-supply, Low-Power 12-Bit Serial-output ADC FEATURES  Alternate Source for MAX1285 and higher-speed upgrade to MAX1240 and

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

(10 views)

ShenZhen Magnetic Cube Technology Co., LTD. TSM SERIES ® Part numbering system ◎ All test Data is referenced to 25℃ ambient. ◎ Operating tempera

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ShenZhen Magnetic Cube Technology Co., LTD. TSM SERIES ® Part numbering system ◎ All test Data is referenced to 25℃ ambient. ◎ Operating tempera

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DC/DC Converter TSM Series, 1 Watt • SMD package (SOIC-8/10) • Construction in lead frame technology • I/O isolation 1000 VDC • Efficiency up to

(8 views)