T6322A (Taiwan Memory Technology)
PWM Control 1.5A Step-Down Converter
tm TE CH
FEATURES
• Wide Input Voltage Range: 7V to 30V • LED Output Current Up to 1.5A • Soft-start • Single pin on/off and brightness control
using
Published:
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17 views
T2316407A (Taiwan Memory Technology)
(T2316405A / T2316407A) EDO/FPM DRAM
tm
TE CH
T2316405A Preliminary T2316407A
DRAM
FEATURES
• Industry-standard x 4 pinouts and timing functions • power supply : T2316405A 2.6V(±0.2V)
Published:
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10 views
T224162B (Taiwan Memory Technology)
256K x 16 DYNAMIC RAM EDO PAGE MODE
www.DataSheet4U.com
tm
TE CH
T224162B
DRAM
256K x 16 DYNAMIC RAM
EDO PAGE MODE
FEATURES
• Industry-standard x 16 pinouts and timing functions.
Published:
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9 views
T35L6432B (Taiwan Memory Technology)
64K x 32 SRAM
tm TE CH
SYNCHRONOUS BURST SRAM
T35L6432B
64K x 32 SRAM
Flow-Through Burst Mode
FEATURES
• Fast Access times: 9 / 10 / 11 / 12 ns • Single 3.3V (+0.
Published:
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8 views
T221160A (Taiwan Memory Technology)
64K x 16 DYNAMIC RAM FAST PAGE MODE
www.DataSheet4U.com
tm
TE CH
T221160A
DRAM
FEATURES
64K x 16 DYNAMIC RAM
FAST PAGE MODE PIN ASSIGNMENT ( Top View )
V cc I/01 I/02 I/03 I/04 V cc
Published:
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8 views
T224160B (Taiwan Memory Technology)
256K x 16 DYNAMIC RAM FAST PAGE MODE
www.DataSheet4U.com
tm
TE CH
T224160B
DRAM
FEATURES
• Industry-standard x 16 pinouts and timing functions. • Single 5V (±10%) power supply. • All
Published:
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8 views
T2316405A (Taiwan Memory Technology)
(T2316405A / T2316407A) EDO/FPM DRAM
tm
TE CH
T2316405A Preliminary T2316407A
DRAM
FEATURES
• Industry-standard x 4 pinouts and timing functions • power supply : T2316405A 2.6V(±0.2V)
Published:
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8 views
T2316162A (Taiwan Memory Technology)
1024K x 16 DYNAMIC RAM EDO PAGE MODE
tm
TE CH
T2316162A
DRAM
FEATURES
• Industry-standard x 16 pinouts and timing functions. • Single 5V (±10%) power supply. www.DataSheet4U.com • All
Published:
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8 views
T14L2M16A (Taiwan Memory Technology)
128K X 16 HIGH SPEED CMOS STATIC RAM
www.DataSheet4U.com
tm
TE CH
Preliminary T14L2M16A
SRAM
FEATURES
• Fast access time : 8/10/12/15 ns • Low-power consumption : Stand-by current (CM
Published:
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7 views
T6313A (Taiwan Memory Technology)
High Efficiency WhiteLED Charge Pump
tm
TE CH
Preliminary T6313A
Low Noise, High Efficiency WhiteLED Charge Pump
FEATURES
• 4 Current Source Outputs • 20mA Full Scale Current for each
Published:
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7 views
T6326A (Taiwan Memory Technology)
Constant-Current White LED
tm
TE CH
Preliminary T6326A
Low-Dropout, Constant-Current White LED with Channel Control
FEATURES
• Up to 400mA LED Bias Current • 3% LED Current M
Published:
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7 views
T4312816A (Taiwan Memory Technology)
8M x 16 SDRAM
tm TE CH
SDRAM
Preliminary T4312816A
8M x 16 SDRAM
2M x 16bit x 4Banks Synchronous DRAM
FEATURES
• 3.3V power supply • Four banks operation • LVTTL
Published:
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6 views
T35L3232B (Taiwan Memory Technology)
32K x 32 SRAM
tm TE CH
SYNCHRONOUS BURST SRAM
Preliminary T35L3232B
32K x 32 SRAM
Pipeline and Flow-Through Burst Mode
FEATURES
¡E FT pin for user configurable pi
Published:
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6 views
T35L6432A (Taiwan Memory Technology)
64K x 32 SRAM
tm TE CH
SYNCHRONOUS BURST SRAM
T35L6432A
64K x 32 SRAM
3.3V supply, fully registered inputs and outputs, burst counter
FEATURES
¡EFast Access times
Published:
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6 views
T14L256A (Taiwan Memory Technology)
32K X 8 HIGH SPEED CMOS STATIC RAM
www.DataSheet4U.com
tm
TE CH
T14L256A
SRAM
FEATURES
• High speed access time: 8/10/12/15ns(max.) • Low power consumption : Active 300 mW (typ.) •
Published:
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6 views
T6316A (Taiwan Memory Technology)
Constant-Current White LED Bias Supply
tm
TE CH
Preliminary T6316A/B
Low-Dropout, Constant-Current White LED Bias Supply
FEATURES
• Up to 400mA LED Bias Current • 3% LED Current Matching
Published:
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6 views
T6336A (Taiwan Memory Technology)
Two Channel Constant Current Regulator
tm
TE CH
T6336A
Two Channel Constant Current Regulator
FEATURES
• Two Channel Constant Current Regulator • Option Current:
260mA/85mA, www.DataShee
Published:
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6 views
T63H0006B (Taiwan Memory Technology)
Li-Ion Battery Protector
tm
Features
TE CH
T63H0006B
T63H0006B
• Low supply current : operating current : 3.0uA (TYP.) Standby current : 0.15uA (TYP.) (after detecting over
Published:
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6 views
T35L6464A (Taiwan Memory Technology)
64K x 64 SRAM
tm TE CH
T35L6464A
SYNCHRONOUS BURST SRAM
64K x 64 SRAM
3.3V SUPPLY, FULLY REGISTERED AND OUTPUTS, BURST COUNTER
FEATURES
• Fast Access times: 5,
Published:
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5 views
T14L1024N (Taiwan Memory Technology)
128K X 8 HIGH SPEED CMOS STATIC RAM
www.DataSheet4U.com
tm
TE CH
T14L1024N
SRAM
FEATURES
• Fast Address Access Times : 10/12/15ns • Single 3.3V ±0.3V power supply • Center power/grou
Published:
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5 views