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isc Silicon PNP Power Transistors BDT82/84/86/88 DESCRIPTION ·DC Current Gain -hFE = 40(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage- : VCEO(

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isc Silicon NPN Power Transistor INCHANGE Semiconductor 3DD13009 DESCRIPTION ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collect

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Elektronische Bauelemente KTC3205 NPN Silicon General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEAT

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ST 2SA1270 PNP Silicon Epitaxial Planar Transistor for switching and general purpose applications. The transistor is subdivided into two groups O and

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●：■■■■ROHS ●FEATURES:■HIGH VOLTAGE CAPABILITY ■HIGH SPEED SWITCHING ■WIDE SOA ■ROHS COMPLIANT ●PC ●APPLICATION: PC Switch Mode Power Supply ●（TC=25℃）

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SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD718 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SB688 APP

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LM3046 Transistor Array July 1999 LM3046 Transistor Array General Description The LM3046 consists of five general purpose silicon NPN transistors on

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LM3045 LM3046 LM3086 Transistor Arrays December 1994 LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each co

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LM3045 LM3046 LM3086 Transistor Arrays December 1994 LM3045 LM3046 LM3086 Transistor Arrays General Description The LM3045 LM3046 and LM3086 each co

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BC546/D Amplifier Transistors NPN Silicon COLLECTOR 1 BC546, B BC547, A, B, C BC548,

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm • High breakdown voltage: VCEO = 230 V (mi

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2SD400 TO-92MOD Transistor (NPN) 1 1. EMITTER 2 3 2. COLLECTOR 3. BASE Features — Low-Frequency power Amp, Electronic Governor Applications TO

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INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification IRFZ44N FEATURES ·Drain Current –ID=49A@ TC=25℃ ·Drain Source Volta

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6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com TECHNICAL DATA SHEET NPN

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PC817(D) 4 PIN DPHOTOTRANSISTOR PHOTOCOUPLER Description The 817 series of devices each consist of an infrared emitting diodes, optically coupled to a

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FJP13007 — High Voltage Fast-Switching NPN Power Transistor November 2014 FJP13007 High Voltage Fast-Switching NPN Power Transistor Features • High

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isc Silicon NPN Power Transistor INCHANGE Semiconductor BD333 DESCRIPTION ·High DC Current Gain ·Complement to type BD334 ·Minimum Lot-to-Lot variat

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IPT007N06N MOSFET OptiMOSTM Power-Transistor, 60 V Features • 100% avalanche tested • Superior thermal resistance • N-channel • Qualified according t

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BC54PA-Q series 45 V, 1 A NPN medium power transistors Rev. 1 — 2 May 2022 Product data sheet 1. General description NPN medium power transistor in

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