UFD Datasheet | Specifications & PDF Download

SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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www.DataSheet.co.kr FGH40N65UFD 600V, 40A Field Stop IGBT March 2009 FGH40N65UFD 650V, 40A Field Stop IGBT Features • High current capability • Low

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SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides

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SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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SGH80N60UFD SGH80N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low c

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DMP2021UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -20V RDS(ON) max 16mΩ @ VGS = -4.5V 22mΩ @ VGS = -2.5V ID max TA = +25°C -9

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www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102D - 1110D 1102FD - 1110FD 11

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www.DataSheet4U.com SK6211Bx Enhanced UFD Controller Rev. 3.00 Mar. 24, 2008 Skymedi Corporation -1- Date: 2008-03-24 Version: 3.00 SK6211 Enhanc

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IGBT - Field Stop 600 V, 20 A FGH20N60UFD Description Using novel field stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum p

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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK 0 October 2006 FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features • High speed switching • Low saturation voltage :

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SGH23N60UFD SGH23N60UFD Ultra-Fast IGBT September 2000 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series prov

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FGH60N60UFD — 600V, 60A Field Stop IGBT FGH60N60UFD 600V, 60A Field Stop IGBT Features • High Current Capability • Low Saturation Voltage: VCE(sat) =

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www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102D - 1110D 1102FD - 1110FD 11

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Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V ID Max TA = +25°C 7.9A 7.2A 6.1A 5.2A

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IGBT - Field Stop 600 V, 40 A FGH40N60UFD Description Using novel Field Stop IGBT technology, onsemi’s field stop IGBTs offer the optimum performance

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DMN2024UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ

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ADVANCED INFORMATION DMN1008UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 8mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V

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DMC2053UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device BVDSS Q1 N-Channel Q2 P-Channel 20V -20V RDS(ON) Max 35mΩ @ VGS =

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ADVANCE INFORMATION DMP1005UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -12V RDS(ON) Max 8.5mΩ @ VGS = -4.5V 12mΩ @ VGS = -2.5V I

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