UFD Datasheet | Specifications & PDF Download

FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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FGH40N60UFD — 600 V, 40 A Field Stop IGBT November 2013 FGH40N60UFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation

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www.DataSheet4U.com SK6211Bx Enhanced UFD Controller Rev. 3.00 Mar. 24, 2008 Skymedi Corporation -1- Date: 2008-03-24 Version: 3.00 SK6211 Enhanc

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SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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FGA60N60UFD — 600 V, 60 A Field Stop IGBT November 2013 FGA60N60UFD 600 V, 60 A Field Stop IGBT Features • High Current Capability • Low Saturation

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IGBT - Field Stop 600 V, 40 A FGH40N60UFD Description Using novel Field Stop IGBT technology, onsemi’s field stop IGBTs offer the optimum performance

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SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides

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www.DataSheet.co.kr FGH40N65UFD 600V, 40A Field Stop IGBT March 2009 FGH40N65UFD 650V, 40A Field Stop IGBT Features • High current capability • Low

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16.0AMP SUPER FASTER RECOVERY RECTIFIERS Max Ratings 25C Peak Repetitive Reverse Voltage working Peak Reverse Voltage DC Blocking Voltage RMS Reverse

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ADVANCED INFORMATION DMP1046UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS P-Channel -12V RDS(ON) max 61mΩ @ VGS = -4

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DMP1055UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS -12V RDS(ON) max 59mΩ @ VGS = -4.5V 81mΩ @ VGS = -2.5V 115mΩ @ VGS = -1

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IGBT - Field Stop 600 V, 20 A FGH20N60UFD Description Using novel field stop IGBT Technology, ON Semiconductor’s field stop IGBTs offer the optimum p

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NEW PRODUCT INFORMATION AADDVVAANNC EC ED DMP2021UFDE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 16mΩ @ VGS = -4.5V

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SGL160N60UFD SGL160N60UFD Ultrafast IGBT IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low

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www.DataSheet4U.com D Da at ta aS Sh he ee et t PRODUCT MODEL SS5W4UFDC Features: 1. Low power consumption 2. High efficiency 3. Reliable and rugged

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16.0AMP SUPER FASTER RECOVERY RECTIFIERS Max Ratings 25C Peak Repetitive Reverse Voltage working Peak Reverse Voltage DC Blocking Voltage RMS Reverse

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16.0AMP SUPER FASTER RECOVERY RECTIFIERS Max Ratings 25C Peak Repetitive Reverse Voltage working Peak Reverse Voltage DC Blocking Voltage RMS Reverse

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DMN1025UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 12V RDS(ON) MAX 25mΩ @ VGS = 4.5V 30mΩ @ VGS = 2.5V 38m

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Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V ID Max TA = +25°C 7.9A 7.2A 6.1A 5.2A

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