UFD Datasheet | Specifications & PDF Download

SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides

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SGH13N60UFD N-CHANNEL IGBT FEATURES TO-3P * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=6.5A) * High Input Impedance *

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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DMN2024UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ

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SGH10N60RUFD — 600 V, 10 A Short Circuit Rated IGBT SGH10N60RUFD 600V, 10 A Short Circuit Rated IGBT December 2013 Features • Short Circuit Rated 1

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SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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www.DataSheet4U.com 200 V - 1,000 V Single Phase Bridge 1.4 A - 1.5 A Forward Current 70 ns - 3000 ns Recovery Time 1102D - 1110D 1102FD - 1110FD 11

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FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK 0 October 2006 FGP7N60RUFD 600V, 7A RUF IGBT CO-PAK Features • High speed switching • Low saturation voltage :

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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FGH40N60UFD — 600 V, 40 A Field Stop IGBT November 2013 FGH40N60UFD 600 V, 40 A Field Stop IGBT Features • High Current Capability • Low Saturation

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www.DataSheet.co.kr FGH40N65UFD 600V, 40A Field Stop IGBT March 2009 FGH40N65UFD 650V, 40A Field Stop IGBT Features • High current capability • Low

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FGA60N60UFD — 600 V, 60 A Field Stop IGBT November 2013 FGA60N60UFD 600 V, 60 A Field Stop IGBT Features • High Current Capability • Low Saturation

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DMN2013UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS RDS(ON) MAX 11m @ VGS = 4.5V 20V 13mΩ @ VGS = 2.5V 30m @ VGS = 1.8V 50mΩ

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Product Summary BVDSS 20V RDS(ON) Max 22mΩ @ VGS = 4.5V 26mΩ @ VGS = 2.5V 36mΩ @ VGS = 1.8V 50mΩ @ VGS = 1.5V ID Max TA = +25°C 7.9A 7.2A 6.1A 5.2A

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DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) Max 35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V

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DMN2025UFDB DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 20V RDS(ON) max 25mΩ @ VGS = 4.5V 31mΩ @ VGS = 2.5V ID max TA = +25°C

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ADVANCED INFORMATION DMT2004UFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 24V RDS(ON) Max 6.0mΩ @ VGS = 10V 7.2mΩ @ VGS = 4.5V 12.5

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ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new

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SGH10N120RUFD SGH10N120RUFD Short Circuit Rated IGBT IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs)

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SGH15N60RUFD SGH15N60RUFD Short Circuit Rated IGBT IGBT General Description Fairchild's RUFD series of Insulated Gate Bipolar Transistors (IGBTs) p

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