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SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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FGA40N60UFD IGBT FGA40N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con

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SGF23N60UFD SGF23N60UFD Ultra-Fast IGBT June 2001 IGBT General Description Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides

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NEW PRODUCT INFORMATION AADDVVAANNC EC ED DMP2021UFDE P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 16mΩ @ VGS = -4.5V

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ADVAADNVCAENDC IENIFNOFROMRAMTAITOINON Product Summary V(BR)DSS 20V RDS(ON) max 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID max TA = +25°C 11.7A 10.8A

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ADVANCE INFORMATION Product Summary BVDSS 20V RDS(ON) MAX 9.5mΩ @ VGS = 4.5V 11mΩ @ VGS = 2.5V ID MAX TA = +25°C 11.7A 10.8A Description This new

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ADVANCED INFORMATION DMT2004UFDF N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 24V RDS(ON) Max 6.0mΩ @ VGS = 10V 7.2mΩ @ VGS = 4.5V 12.5

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ADVANCED INFORMATION DMN1008UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 12V RDS(ON) Max 8mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V

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ADVANCED INFORMATION YW X Product Summary BVDSS 12V RDS(ON) Max 8mΩ @ VGS = 4.5V 12.5mΩ @ VGS = 2.5V ID Max TA = +25°C 12.2A 10.4A Description an

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ADVANCED INFORMATION DMP2016UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 15mΩ @ VGS = -4.5V 19mΩ @ VGS = -2.5V I

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Product Summary BVDSS 30V RDS(ON) Max 19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V ID Max TC = +25°C 15A 14A 10A 6A De

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BCR420UFDQ / BCR421UFDQ LINEAR LED CONSTANT CURRENT REGULATOR IN U-DFN2020-6 Description These Linear LED drivers are designed to meet the stringent

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DMP2110UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS -20V RDS(ON) Max 75mΩ @ VGS = -4.5V 110mΩ @ VGS = -2.5V ID Max TA = +25°

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BCR420UFD / BCR421UFD LINEAR LED CONSTANT CURRENT REGULATOR IN DFN2020-6 Description The BCR420UFD and BCR421UFD monolithically integrate transistors

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www.DataSheet.co.kr FGH40N65UFD 600V, 40A Field Stop IGBT March 2009 FGH40N65UFD 650V, 40A Field Stop IGBT Features • High current capability • Low

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FGA60N60UFD — 600 V, 60 A Field Stop IGBT November 2013 FGA60N60UFD 600 V, 60 A Field Stop IGBT Features • High Current Capability • Low Saturation

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DMN2028UFDH DUAL N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary V(BR)DSS 20V RDS(ON) max 20mΩ @ VGS = 10V 22mΩ @ VGS = 4.5V 26mΩ @ VGS

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DMC2025UFDBQ COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Q1 N-Channel Q2 P-Channel BVDSS 20V -20V RDS(ON) Max 25mΩ @ VGS = 4

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Product Summary BVDSS 30V RDS(ON) Max 19mΩ @ VGS = 4.5V 25mΩ @ VGS = 2.5V 40mΩ @ VGS = 1.8V 120mΩ @ VGS = 1.5V ID Max TC = +25°C 15A 14A 10A 6A De

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DMN2053UFDBQ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) Max 35mΩ @ VGS = 4.5V 43mΩ @ VGS = 2.5V

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