G80N60UFD Datasheet, Sgh80n60ufd, Fairchild Semiconductor

G80N60UFD Features

  • Sgh80n60ufd
  • High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.) Applica

PDF File Details

Part number:

G80N60UFD

Manufacturer:

Fairchild Semiconductor

File Size:

707.07kb

Download:

📄 Datasheet

Description:

Sgh80n60ufd. Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is

Datasheet Preview: G80N60UFD 📥 Download PDF (707.07kb)
Page 2 of G80N60UFD Page 3 of G80N60UFD

G80N60UFD Application

  • Applications such as motor control and general inverters where high speed switching is a required feature. Features
  • <

TAGS

G80N60UFD
SGH80N60UFD
Fairchild Semiconductor

📁 Related Datasheet

G80N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD Description The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .

G80N06 - MOSFET (GOFORD)
GOFORD G80N06 Description The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in.

G80 - Detach Connectors (Mitsumi Electronics)
MITSUMI Detach Connectors CAM-G79 ยท G80 Connectors OUTLINE 1. These are 16-pole connectors used for attaching and removing the operation panel to a.

G800N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G800N06H - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G8050 - NPN EPITAXIAL TRANSISTOR (GTM)
.. CORPORATION G8050 Description Features N P N E P ITAX IA L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8050 i.

G8050S - NPN EPITAXIAL TRANSISTOR (GTM)
.. CORPORATION G8050S Description Features N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRAN.

G8051 - NPN EPITAXIAL TRANSISTOR (GTM)
.. CORPORATION G8051 Description Features N P N E P ITAX IA L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8051 i.

G8051S - NPN EPITAXIAL TRANSISTOR (GTM)
.. ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S Description Features N P N E P I TA X I A L T R A N S I S T O R LOW VO.

G80F903 - 8051 Microcontroller (dycmcu)
G80F903 ,1T 8051 8KFLASH,EEPROM 8PWM,10ADC,UART VER1.6 2012.12 G80F903 ,1T 8051 FRLOASMH RAM EPPROM MI/AOXTIMERINTADCLCD LEDPWMRTC EUART .

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts