G800N06 Datasheet, Mosfet, GOFORD

G800N06 Features

• Mosfet l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 3A < 80mΩ < 85mΩ l 100% Avalanche Tested l RoHS Compliant Schematic diagram Application l Power sw

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Part number:

G800N06

Manufacturer:

GOFORD

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869.92kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of app

G800N06 Application

• Applications General Features l VDS l ID (at VGS = 10V) l RDS(ON) (at VGS = 10V) l RDS(ON) (at VGS = 4.5V) 60V 3A < 80mΩ < 85mΩ l 100% Avalanch

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G800N06

GOFORD

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