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G80N04 Datasheet - GOFORD

G80N04 - N-Channel Enhancement Mode Power MOSFET

G80N04 Features

* VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special proce

G80N04-GOFORD.pdf

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Datasheet Details

Part number:

G80N04

Manufacturer:

GOFORD

File Size:

1.78 MB

Description:

N-channel enhancement mode power mosfet.

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