G80N04 N-Channel Enhancement Mode Power MOSFET

Description

GOFORD .
The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number: G80N04
Manufacturer: GOFORD
File Size: 1.78 MB
Datasheet: G80N04-GOFORD.pdf
Description: N-Channel Enhancement Mode Power MOSFET

Features

* VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special proce

G80N04 Distributors

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