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G80N04 - N-Channel Enhancement Mode Power MOSFET

G80N04 Description

GOFORD .
The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

G80N04 Features

* VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special proce

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Datasheet Details

Part number
G80N04
Manufacturer
GOFORD
File Size
1.78 MB
Datasheet
G80N04-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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N-Channel Enhancement Mode Power MOSFET GOFORD
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