G80N04 - N-Channel Enhancement Mode Power MOSFET
G80N04 Features
* VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special proce
