G80N04 Datasheet - GOFORD

N-Channel Enhancement Mode Power MOSFET

* VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special proce

G80N04

GOFORD

1.78 MB

N-channel enhancement mode power mosfet.

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G80N04 N-Channel Enhancement Mode Power MOSFET GOFORD

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