G80N04 Datasheet, Mosfet, GOFORD

✔ G80N04 Features

VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and curre

✔ G80N04 Application

General Features VDSS RDS(ON) @10V (typ) 40V 3.2 mΩ RDS(ON) ID @4.5V (typ) 5.5 mΩ 90A
High density c

PDF File Details

Part number:

G80N04

Manufacturer:

GOFORD

File Size:

1.78 MB

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

📥 Download PDF (1.78 MB)

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G80N04 N-Channel Enhancement Mode Power MOSFET GOFORD