Datasheet Details
- Part number
- G80N04
- Manufacturer
- GOFORD
- File Size
- 1.78 MB
- Datasheet
- G80N04-GOFORD.pdf
- Description
- N-Channel Enhancement Mode Power MOSFET
G80N04 Description
GOFORD .
The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
G80N04 Features
* VDSS RDS(ON) @10V (typ)
40V
3.2 mΩ
RDS(ON) ID @4.5V (typ)
5.5 mΩ 90A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special proce
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