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G80N06 Datasheet - GOFORD

MOSFET

G80N06 Features

* VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A

* High density cell design for ultra low Rdson

* Fully characterized avalanche voltage and current

* Good stability and uniformity with high EAS

* Excellent package for good heat dissipation

* Special process technology for hi

G80N06 Datasheet (1.46 MB)

Preview of G80N06 PDF

Datasheet Details

Part number:

G80N06

Manufacturer:

GOFORD

File Size:

1.46 MB

Description:

Mosfet.

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