G80N06 Datasheet - GOFORD

G80N06, MOSFET

GOFORD G80N06 .
The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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G80N06-GOFORD.pdf

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Datasheet Details

Part number:

G80N06

Manufacturer:

GOFORD

File Size:

1.46 MB

Description:

MOSFET

Features

* VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi

G80N06 Distributors

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