G80N06 MOSFET

Description

GOFORD G80N06 .
The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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G80N06 Datasheet Preview — Preview of G80N06 PDF

Datasheet Specifications

Part number: G80N06
Manufacturer: GOFORD
File Size: 1.46 MB
Datasheet: G80N06-GOFORD.pdf
Description: MOSFET

Features

* VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi

G80N06 Distributors

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