G80N06 Datasheet, Mosfet, GOFORD

✔ G80N06 Features

VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and

✔ G80N06 Application

General Features
VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
High density cell design for ultra lo

PDF File Details

Part number:

G80N06

Manufacturer:

GOFORD

File Size:

1.46MB

Download:

📄 Datasheet

Description:

Mosfet. The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide var

📥 Download PDF (1.46MB)

📁 Related Datasheet

G80N04 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
GOFORD Description The G80N04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide .

G80N60UFD - SGH80N60UFD (Fairchild Semiconductor)
SGH80N60UFD IGBT SGH80N60UFD Ultrafast IGBT General Description Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low con.

G80 - Detach Connectors (Mitsumi Electronics)
MITSUMI Detach Connectors CAM-G79 · G80 Connectors OUTLINE 1. These are 16-pole connectors used for attaching and removing the operation panel to a.

G800N06 - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G800N06H - N-Channel Enhancement Mode Power MOSFET (GOFORD)
G800N06H N-Channel Enhancement Mode Power MOSFET Description The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate ch.

G8050 - NPN EPITAXIAL TRANSISTOR (GTM)
.. CORPORATION G8050 Description Features N P N E P ITAX IA L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8050 i.

G8050S - NPN EPITAXIAL TRANSISTOR (GTM)
.. CORPORATION G8050S Description Features N P N E P I TA X I A L T R A N S I S T O R LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRAN.

G8051 - NPN EPITAXIAL TRANSISTOR (GTM)
.. CORPORATION G8051 Description Features N P N E P ITAX IA L T R AN S IS T O R ISSUED DATE :2004/12/27 REVISED DATE : The G8051 i.

G8051S - NPN EPITAXIAL TRANSISTOR (GTM)
.. ISSUED DATE :2003/11/11 REVISED DATE :2004/11/29B G8051S Description Features N P N E P I TA X I A L T R A N S I S T O R LOW VO.

G80F903 - 8051 Microcontroller (dycmcu)
G80F903 ,1T 8051 8KFLASH,EEPROM 8PWM,10ADC,UART VER1.6 2012.12 G80F903 ,1T 8051 FRLOASMH RAM EPPROM MI/AOXTIMERINTADCLCD LEDPWMRTC EUART .

TAGS

G80N06 MOSFET GOFORD