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G80N06 - MOSFET

G80N06 Description

GOFORD G80N06 .
The G80N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

G80N06 Features

* VDSS RDS(ON) ID @ 4.5V(typ) 60V 9.5 mΩ 80 A
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current
* Good stability and uniformity with high EAS
* Excellent package for good heat dissipation
* Special process technology for hi

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Datasheet Details

Part number
G80N06
Manufacturer
GOFORD
File Size
1.46 MB
Datasheet
G80N06-GOFORD.pdf
Description
MOSFET

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