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G800N06H - N-Channel Enhancement Mode Power MOSFET

G800N06H Description

G800N06H N-Channel Enhancement Mode Power MOSFET .
The G800N06H uses advanced trench technology to provide excellent RDS(ON) , low gate charge.

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Datasheet Details

Part number
G800N06H
Manufacturer
GOFORD
File Size
869.92 KB
Datasheet
G800N06H-GOFORD.pdf
Description
N-Channel Enhancement Mode Power MOSFET

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