UHB Datasheet | Specifications & PDF Download

Description 9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products feature a stacked cascode for

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DATASHEET Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, Half-Bridge Module, 1200 V, 9.4 mohm Rev. D, January 2025 UHB100SC12E1BC3N Descripti

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EST F45D60UHB/A EST F45D60UHB/A TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Features  Ultrafast switching  Low reverse recovery current  Reduces swit

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www.DataSheet4U.com UH20FCT& UHB20FCT New Product Vishay General Semiconductor Dual Common-Cathode Ultrafast Recovery Rectifier FEATURES • Oxide pl

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New Product www.datasheet4u.com UH10FT & UHB10FT Vishay General Semiconductor Ultrafast Recovery Rectifier FEATURES • Oxide planar chip junction TO-

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UHBM45 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBM45 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: • • • Omnigold™ Metalization

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UHBS60-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-2 is Designed for FEATURES: • • • Omnigold™ Metalization System PACKAGE STYLE

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UHBS15-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-2 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E

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UHBS30-2 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-2 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E

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UHBS30-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS30-1 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° C B 2XØ.130 4X .025 R .1

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UHBS60-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS60-1 is Designed for PACKAGE STYLE .230 6L FLG FEATURES: • • • Omnigold™ Metalizat

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UHBS15-1 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI UHBS15-1 is Designed for PACKAGE STYLE .230 6L FLG A .040x45° 4X .025 R .115 .430 D E

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