VBE Datasheet | Specifications & PDF Download

HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE60-06A 3 24 1 VBE60-06A VRRM = I DA

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HiPerFRED Module High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE26-12NO7 K N A D VBE26-12NO7

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PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID

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VBE17R04 Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 700 VGS = 10 V 2.7 48

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VBM15R15S / VBMB15R15S / VBE15R15S www.VBsemi.com N-Channel 500V (D-S) Super Junction Power MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) at 2

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VBE2102M/VBFB2102M P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.250 at VGS = - 10 V 0.280 at VGS = -

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NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) VBE 20 I = 20 A dAV VRRM = 2000 V trr = 70 ns VRSM V 2000 VRRM V 2000 Typ

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NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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VBE1638 N-Channel 6 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 4

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VBE2205M P-Channel 200V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) () VGS = -10 V 0.50 Qg max. (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27

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VBM16R02S / VBMB16R02S VBE16R02S / VBFB16R02S www.VBsemi.com /$IBOOFM
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Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)

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VBE5410 N- and P-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID

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VBE1252M www.VBsemi.com N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 250

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