VBE Datasheet | Specifications & PDF Download

VBE1252M www.VBsemi.com N-Channel 250 V (D-S) 175 °C MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 250

(12 views)

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(10 views)

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(9 views)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(8 views)

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(8 views)

VBE1695 N-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 60 RDS(on) () Max. 0.073 at VGS = 10 V 0.085 at VGS = 4.5 V TO-252

(8 views)

VBM16R02S / VBMB16R02S VBE16R02S / VBFB16R02S www.VBsemi.com /$IBOOFM
607
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω)

(8 views)

VBM165R02S / VBMB165R02S VBE165R02S / VBFB165R02S www.VBsemi.com /$IBOOFM
657
%4 4VQFS
+VODUJPO
Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)

(8 views)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(7 views)

Advanced Technical Information VBE 60-06A Single Phase Rectifier Bridge with Fast Recovery Epitaxial Diodes (FRED) IdAV = 60 A VRRM = 600 V trr = 3

(7 views)

VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID

(7 views)

VBE2625 P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID (A) - 50 - 45 TO-2

(7 views)

VBE5410 N- and P-Channel 40 V (D-S) MOSFET PRODUCT SUMMARY N-CHANNEL P-CHANNEL VDS (V) RDS(on) () at VGS = ± 10 V RDS(on) () at VGS = ± 4.5 V ID

(7 views)

VBE2625A P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID (A) - 50 - 45 TO-

(7 views)

VBE25R04 www.VBsemi.com P-Channel 500 V (D-S) Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 50

(7 views)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(6 views)

HiPerFRED Module High Performance Fast Recovery Diode Low Loss and Soft Recovery 1~ Rectifier Bridge Part number VBE55-06NO7 K N A D VBE55-06NO7

(6 views)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(6 views)

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(6 views)

VBE2658 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.046 at VGS = - 10 V 0.058 at VGS = - 4.5 V ID (

(6 views)