VBE Datasheet | Specifications & PDF Download

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PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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VBE1206N N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.055 at VGS = 10 V ID (A) 30 D TO-252 FEATURES •

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VBE1106N N-Channel 100 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.055 at VGS = 10 V 100 0.057 at VGS = 4.5 V ID (A) 25 25 Qg (Typ.)

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VBE2625 P-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 0.020 at VGS = - 10 V - 60 0.025 at VGS = - 4.5 V ID (A) - 50 - 45 TO-2

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VBE2345 P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.035 at VGS = - 10 V 0.054 at VGS = - 4.5 V ID (A)d - 38 - 20 Q

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VBE1104N N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (Ω) 100 0.030 at VGS = 10 V 0.035 at VGS = 4.5 V ID

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/ HISTORY ( 2 / 24 ) DATE May 11,2011 Oct 17,2011 Oct 10,2012 HISTORY REV. 0 REV. 1 REV. 2 CHANGED CONTENT CHARGE 。 New making 14.にてFE

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NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(2 views)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(2 views)

NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

(2 views)

PNP Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emit

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eorex Revision History Revision 0.1 (Dec. 2013) - First release EM484M3244VBE Dec. 2013 www.eorex.com 1/18 eorex EM484M3244VBE 128Mb (1M4Bank3

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VBE2610N P-Channel 60-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 0.061 at V GS = - 10 V 0.072 at VGS = - 4.5 V ID

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VBE1638 N-Channel 6 0-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V ID (A)a 4

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VBE2658 P-Channel 60 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) () - 60 0.046 at VGS = - 10 V 0.058 at VGS = - 4.5 V ID (

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VBE2205M P-Channel 200V (D-S) MOSFET PRODUCT SUMMARY VDS (V) -200 RDS(on) () VGS = -10 V 0.50 Qg max. (nC) 44 Qgs (nC) 7.1 Qgd (nC) 27

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VBE1203M N-Channel 200 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 200 RDS(on) () 0.245 at VGS = 10 V ID (A) 10 D TO-252 FEATURES •

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VBE1402 N-Channel 40-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 40 0.0016 at VGS = 10 V 0.0020 at VGS = 4.5 V ID (A)a,

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