Volt-Only Datasheet | Specifications & PDF Download

Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprogram (Erase and

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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HY29F400 4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirement

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Features • 4.5V to 5.5V Read/Write • Access Time – 90 ns • Sector Erase Architecture – Thirty 32K Word (64K byte) Sectors with Individual Write Lockou

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HY29F002T 2 Megabit (256K x 8), 5 Volt-only, Flash Memory KEY FEATURES n 5 Volt Read, Program, and Erase – Minimizes system-level power requirements n

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PRELIMINARY Am29F040B 4 Megabit (512 K x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics s 5.0 V ± 10% for read an

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S29AL004D 4 Megabit (512 Kx 8-Bit/256 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory ADVANCE INFORMATION Notice to Readers: The Advance Inf

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www.DataSheet4U.com S29AL016D 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory Data Sheet PRELIMINARY Distinctive C

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www.DataSheet4U.com ADVANCE INFORMATION S29GLxxxA MirrorBit™ Flash Family S29GL064A, S29GL032A 64 Megabit, 32 Megabit 3.0, Volt-only Page Mode Flash

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www.DataSheet4U.com S29GL-A MirrorBit® Flash Family S29GL064A, S29GL032A, and S29GL016A 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mod

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PRELIMINARY Am29F800BT/Am29F800BB 8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s S

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Features • Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • •

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Features • Single 2.7V - 3.6V Supply • Serial Interface Architecture • Page Program Operation • • • • • • • • • • • – Single Cycle Reprogram (Erase an

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Features • Single 2.7V - 3.6V Supply • Sequential Access, Parallel I/O Architecture • Page Program Operation • • • • • • • • • • – Single Cycle Reprog

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Features • Single-voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time – 55 ns • Internal Program Control and Timer • Sector Archite

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Features • Single Voltage Operation – 5V Read – 5V Reprogramming • Fast Read Access Time - 90 ns • Internal Program Control and Timer • 16K bytes Boot

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PRELIMINARY Am29F002NT/Am29F002NB 2 Megabit (262,144 x 8-Bit) CMOS 5.0 Volt-only, Sector Architecture Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0

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AT29C512 Features • • • • • • • • • • • • Fast Read Access Time - 70 ns 5-Volt-Only Reprogramming Sector Program Operation Single Cycle Reprogram (E

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FINAL AmC0XXDFLKA 4, 8, 20, or 32 Megabyte 5.0 Volt-only Flash Memory PC Card DISTINCTIVE CHARACTERISTICS s High performance — 150 ns maximum access

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FINAL Am29F040 4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS s 5.0 V ± 10% for read and writ

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