WFF Datasheet | Specifications & PDF Download

WFF7N65SAH Product Description Silicon N-Channel MOSFET Features • 650V, 7A • RDS(ON) = 0.54Ω (Max.) @ VGS = 10V, ID = 4A • Very low FOM RDS(ON)XQg •

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WFF20N65SAH Product Description Silicon N-Channel MOSFET Features • 650V, 20A • RDS(ON) = 0.19Ω (Max.) @ VGS = 10V, ID = 10A • Very low FOM RDS(ON)XQ

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Features � 7.5A,650V,RDS(on)(Max1.3Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Vol

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Wisdom Semiconductor WFF7N65 N-Channel MOSFET Features ■ RDS(on) (Max 1.4 Ω )@VGS=10V ■ Gate Charge (Typical 28nC) ■ Improved dv/dt Capability, Hig

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HIGH VOLTAGE N-Channel MOSFET      WFF12N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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www.DataSheet.in WFF10N60 Silicon N-Channel MOSFET Features � � � � � � 10A,600V,RDS(on)(Max 0.75Ω)@VGS=10V Ultra-low Gate Charge(Typical 34nC) Fast

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WFF5N65L Product Description Silicon N-Channel MOSFET Features � 4.5A,650V,RDS(on)(Max2.8Ω)@VGS=10V � Ultra-low Gate charge(Typical 14.5nC) � Fast Swi

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HIGH VOLTAGE N-Channel MOSFET      WFF10N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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HIGH VOLTAGE N-Channel MOSFET      WFF8 N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Ext

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Wisdom Semiconductor WFF7N60 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.2 Ω )@VGS=10V Gate Charge (Typical 28nC) Improved dv/dt Capability, High

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Wisdom Semiconductor WFF740 N-Channel MOSFET Features ■ ■ RDS(on) (Max 0.55 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 38nC) ■ Improv

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WFF4N65L Product Description Silicon N-Channel MOSFET Features � 4.0A,650V,RDS(on)(Max2.5Ω)@VGS=10V � Low Crss (typical 3.62pF ) � Fast switching � 10

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WFF8N65L Product Description Silicon N-Channel MOSFET Features � 7.5A,650V,RDS(on)(Max1.4Ω)@VGS=10V � Ultra-low Gate charge(Typical 24nC) � Fast Switc

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Wisdom Semiconductor WFF830 N-Channel MOSFET Features ■ ■ RDS(on) (Max 1.4 Ω )@VGS=10V Symbol ◀ { 2. Drain Gate Charge (Typical 25nC) ■ Improve

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Features � 2A,650V(Type),RDS(on)(Max 5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 9.0nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation

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Features � 4A,600V,RDS(on)(Max 2.5Ω)@VGS=10V � Ultra-low Gate Charge(Typical 16nC) � Fast Switching Capability � 100%Avalanche Tested � Isolation Volt

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HIGH VOLTAGE N-Channel MOSFET      WFF5N60 600V N-Channel MOSFET Features □ Low Intrinsic Capacitances  □ Excellent Switching Characteristics  □ Exte

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WFF8N60B Product Description Silicon N-Channel MOSFET Features � 7.5A,600V,RDS(on)(Max1.2Ω)@VGS=10V � Ultra-low Gate charge(Typical 25nC) � Fast Swit

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