HN27C256AG-12 (Hitachi Semiconductor)
32768-word x 8-bit UV Erasable and Programmable ROM
HN27C256AG Series
32768-word × 8-bit UV Erasable and Programmable ROM
Maintenance only
Description
This Hitachi HN27C256AG is a 256-kbit ultraviolet
(6 views)
HB56SW3272ESK-5 (Hitachi Semiconductor)
256MB Buffered EDO DRAM DIMM 32-Mword x 72-bit/ 4k Refresh/ 2 Bank Module(36 pcs of 16M x 4 components)
HB56SW3272ESK-5/6
256MB Buffered EDO DRAM DIMM 32-Mword × 72-bit, 4k Refresh, 2 Bank Module (36 pcs of 16M × 4 components)
ADE-203-872B (Z) Rev. 1.0
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M5M51016BTP-12VLL-I (Mitsubishi)
1048576-BIT(65536-WORD BY 16-BIT)CMOS STATIC RAM
9 9 Jul Jul,1997 ,1997
M5M51016BTP,RT-12VL-I, M5M51016BTP,RT-12VL-I, -12VLL-I -12VLL-I
1048576-BIT(65536-WORD 1048576-BIT(65536-WORD BY BY 16-BIT)CMO
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M5M5Y5672TG-22 (Mitsubishi)
18874368-BIT(262144-WORD BY 72-BIT) NETWORK SRAM
2001.May Rev.0.1
MITSUBISHI LSIs
Advanced Information
Notice: This is not final specification. Some parametric limits are subject to change.
M5M5Y5
(4 views)
AK591024AG (ACCUTEK)
1048576 Word x 9 Bit CMOS Dynamic Random Access Memory
MICROCIRCUIT CORPORATION
DESCRIPTION
The Accutek AK591024 high density memory modules is a random access memory organized in 1 Meg x 9 bit words. The
(3 views)
GM71CS17400C (Hynix Semiconductor)
4/194/304 WORDS x 4 BIT CMOS DYNAMIC RAM
GM71C(S)17400C/CL
4,194,304 WORDS x 4 BIT CMOS DYNAMIC RAM
Description
The GM71C(S)17400C/CL is the new generation dynamic RAM organized 4,194,304 wo
(3 views)
HM514400C (Hitachi Semiconductor)
1/048/576-word X 4-bit Dynamic Random Access Memory
ADE-203-269A (Z)
1,048,576-word × 4-bit Dynamic Random Access Memory
Rev. 1.0 Nov. 29, 1994
The Hitachi HM514400B/BL, HM514400C/CL are CMOS dynamic R
(3 views)
HM6264 (Hitachi Semiconductor)
8192-word x 8-bit High Speed CMOS Static RAM
(3 views)
CY7S1061G (Cypress Semiconductor)
16-Mbit (1 M words x 16 bit) Static RAM
CY7S1061G/CY7S1061GE
16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and ECC
16-Mbit (1 M words × 16 bit) Static RAM with PowerSnooze™ and
(3 views)
CXK5T81000AM-10LLX (Sony Corporation)
131072-word x 8-bit High Speed CMOS Static RAM
CXK5T81000ATM/AYM/AM -10LLX/12LLX
131072-word × 8-bit High Speed CMOS Static RAM
Description The CXK5T81000ATM/AYM/AM is a high speed CMOS static RAM
(3 views)
CXK5V16100TM-10LLX (Sony Corporation)
65536-word X 16-bit High Speed CMOS Static RAM
CXK5V16100TM -85LLX/10LLX
65536-word × 16-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office.
Descri
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THM362020SG-10 (Toshiba Semiconductor)
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE
(3 views)
THM362020SG-80 (Toshiba Semiconductor)
2/097/152 WORDS x 36BIT DYNAMIC RAM MODULE
(3 views)
THM401020SG-80 (Toshiba Semiconductor)
1/048/576 WORDSx40 BIT DYNAMIC RAM MODULE
(3 views)
LC33832M (Sanyo)
256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is comp
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LC33832ML-10 (Sanyo)
256 K (32768 words X 8 bits) Pseudo-SRAM
Ordering number : EN4430C
CMOS LSI
LC33832P, S, M, PL, SL, ML-70/80/10
256 K (32768 words × 8 bits) Pseudo-SRAM
Overview
The LC33832 series is comp
(3 views)
LC33864P-80 (Sanyo)
512K (65536 words X 8 bits) Pseudo-SRAM
(3 views)
M5M27C202JK-10 (Mitsubishi)
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
(3 views)
M5M44800CTP-5 (Mitsubishi)
FAST PAGE MODE 4194304-BIT (524288-WORD BY 8-BIT) DYNAMIC RAM
M5M44800CJ,TP-5,-6,-7, M5M44800CJ,TP-5,-6,-7,-5S,-6S,-7S -5S,-6S,-7S
FAST FAST PAGE PAGE MODE MODE 4194304-BIT 4194304-BIT (524288-WORD (524288-WORD B
(3 views)
M5M465800BTP-6S (Mitsubishi)
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM
(Rev. 1.1)
MITSUBISHI LSIs
M5M467400/465400BJ,BTP -5,-6,-5S,-6S M5M467800/465800BJ,BTP -5,-6,-5S,-6S M5M465160BJ,BTP -5,-6,-5S,-6S
FAST PAGE MODE 67
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