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OKI electronic componets
31
MD56V62160H - 4-Bank x 1 /048 /576-Word x 16-Bit SYNCHRONOUS DYNAMIC RAM
E2G1052-17-X1 ¡ Semiconductor MD56V62160/H ¡ Semiconductor This version: Mar. 1998 MD56V62160/H Pr el im in ar y 4-Bank ¥ 1,048,576-Word ¥ 16-Bit .
GE
22
CDM6264 - CMOS 8192-Word by 8-Bit LSI Static RAM
Random-Access Memories (RAMs) _______________________ CDM6264 NC AI2 A7 A. AS •• A' A2 AI AD 1/01 1/02 I103 v•• •• 6 10 .."12 I. 28 VDD 27 iVf 2. C.
Hitachi Semiconductor
22
HM62256B - 256k SRAM (32-kword x 8-bit)
HM62256B Series 256k SRAM (32-kword × 8-bit) ADE-203-135F (Z) Rev. 6.0 Nov. 13, 1997 Description The Hitachi HM62256B Series is a CMOS static RAM org.
GE
20
CDP1823 - 128-Word x 8-Bit Static Random-Access Memory
Random-Access Memories (RAMs) _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ __ CDP1823, CDP1823C BLlS 0 eus I 2. 23 BUS 2 22 BUS 3 21 BuS 4 5 BUS 5-.
Cypress Semiconductor
20
CY7C1313BV18 - (CY7C1x1xBV18) 18-Mb QDRTM-II SRAM 4-Word Burst Architecture
CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features • Separate Independent Read and Write dat.
NXP
18
7403 - 4-Bit x 64-word FIFO register
INTEGRATED CIRCUITS DATA SHEET For a complete data sheet, please also download: • The IC06 74HC/HCT/HCU/HCMOS Logic Family Specifications • The IC06 .
Sony Corporation
18
CXK581000P - 131072-word x 8-bit HIGH SPEED COMS STATIC RAM
www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.
Cypress Semiconductor
18
CY7C1523AV18 - 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture
CY7C1522AV18, CY7C1529AV18 CY7C1523AV18, CY7C1524AV18 72-Mbit DDR-II SIO SRAM 2-Word Burst Architecture Features ■ ■ ■ ■ ■ Functional Description Th.
Hynix Semiconductor
17
GM71V18163C - 1M-WORDS x 16-BIT CMOS DYNAMIC RAM
GM71V18163C GM71VS18163CL 1,048,576 WORDS x 16 BIT CMOS DYNAMIC RAM Description The GM71V(S)18163C/CL is the new generation dynamic RAM organized 1,0.
Toshiba
17
TC551632J-20 - 32K Word x 16-Bit CMOS Static RAM
TOSHIBA 11:5516321-20/25/35 SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS STATIC RAM Description The TC551632J is a 524,288 bit high speed CMOS stat.
RCA Solid State
17
CD4036A - (CD4036A / CD4039A) COS/MOS 4-Word by 8-Bit Random Access NDRO Memory
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Elpida Memory
15
HM5257165B-A6 - 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword 16-bit 4-bank/16-Mword 8-bit 4-bank /32-Mword 4-bit 4-bank PC/133/ PC/100 SDRAM
HM5257165B-75/A6 HM5257805B-75/A6 HM5257405B-75/A6 512M LVTTL interface SDRAM 133 MHz/100 MHz 8-Mword × 16-bit × 4-bank/16-Mword × 8-bit × 4-bank /32-.
Mitsubishi
15
M5M29GB160BVP-80 - 16 /777 /216-BIT (2097 /152-WORD BY 8-BIT / 1048 /576-WORD BY16-BIT)CMOS 3.3V-ONLY / BLOCK ERASE FLASH MEMORY
MITSUBISHI LSIs M5M29GB/T160BVP-80 16,777,216-BIT (2097,152-WORD BY 8-BIT / 1048,576-WORD BY16-BIT) CMOS 3.3V-ONLY, BLOCK ERASE FLASH MEMORY DESCRIPT.
Hitachi Semiconductor
15
HN27C256AG - 32768-word x 8-bit UV Erasable and Programmable ROM
HN27C256AG Series 32768-word × 8-bit UV Erasable and Programmable ROM Maintenance only Description This Hitachi HN27C256AG is a 256-kbit ultraviolet.
ACCUTEK
13
AK5364096W - 4194304 Word by 32 Bit CMOS Dynamic Random Access Memory
MICROCIRCUIT CORPORATION DESCRIPTION The Accutek AK5364096W high density memory module is a CMOS Dynamic RAM organized in 4096K x 36 bit words. The mo.
Elpida Memory
13
HM5425401B - 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword 16-bit 4-bank/8-Mword 8-bit 4-bank/ 16-Mword 4-bit 4-bank
HM5425161B Series HM5425801B Series HM5425401B Series 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword × 16-bit × 4-bank/8-Mwor.
