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9013 - NPN SILICON TRANSISTOR
9013 NPN SILICON TRANSISTOR TO 92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 Collector current ICM : 0.5 Collector-base voltage V(BR).9014 - NPN SILICON TRANSISTOR
9014 NPN SILICON TRANSISTOR TO 92 FEATURES Power dissipation PCM : 0.4 W Tamb=25 Collector current A ICM : 0.1 Collector-base voltage V V(BR)CBO :.2SC1047 - Silicon Transistor
2SC1047 GENERAL DESCRIPTION Silicon Epitaxial Planar Transistor High frequency, high power transistors in a plastic envelope, primarily for use in a.MJ10001 - NPN Silicon Transistor
MJ10001 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characterist.TIP142 - NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
TIP140/141/142 HIGH DC CURRENT GAIN NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR •Complementary to TIP145/146/147 SC-65 ABSOLUTE MAXIMUM RATINGS (T.WS7805 - POSITIVE-VOLTAGE REGULATORS
WS7805 3-Termainal Regulators Output Current Up to 1.5 A No External Components POSITIVE-VOLTAGE REGULATORS TO-252 WS7805DP Internal .S8550 - TRANSISTOR
S8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PCM : 0.625 W (Tamb=25℃) Collector current A ICM : - 0.5 Collector-base voltage V(BR)CBO : -.A1011 - 2SA1011
2SA1011 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER www.DataSheet4U.com TO-220 Complement to 2SC2073 ABSOLUTE MAXIMUM RATI.AN6651 - LINEAR INTEGRATED CIRCUIT
www.DataSheet4U.com AN6651 LINEAR INTEGRATED CIRCUIT MOTOR SPEED CONTROL CIRCUIT DESCRIPTION The AN6651 is a monolithic integrated circuit designed.MB354 - SINGLE-PHASE SILICON BRIDGE RECTIFIER(VOLTAGE
KBPC35005-KBPC3510 SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 35 Amperes MECHANICAL DATA * Case: Metal, elect.78L18 - Positive-Voltage Regulators
78L18 D D D D D D 3-Terminal Regulators Output Current up to 100 mA No External Components Internal Thermal-Overload Protection Internal Short-Circuit.2SA473 - PNP EPITAXIAL SILICON TRANSISTOR
2SA473 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER TO-220 Complement to 2SC1173 ABSOLUTE MAXIMUM RATINGS (TA=25℃) Character.2SC1983 - NPN SILICON DARLINGTON TRANSISTOR
2SC1983 NPN SILICON DARLINGTON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS SC-65 ABSOLUTE MAXIMUM RATINGS (TA=25℃) C.HC-49S - CRYSTAL UNIT
HC-49/S 1. SCOPE CRYSTAL UNIT This specification shall cover the characteristics of crystal unit with HC-49/U 3.579545—27.00MHz 2. ELECTRICAL SPECIF.HC-49SSMD - CRYSTAL UNIT
HC-49/S SMD 1. SCOPE CRYSTAL UNIT This specification shall cover the characteristics of crystal unit with HC-49/S SMD 3.579545—27.00MHz 2. ELECTRICA.1N5399 - SILICON RECTIFIER
1N5391 - 1N5399 VOLTAGE RANGE - 50 to 1000 Volts MECHANICAL DATA * * * * * * Case: Molded plastic Epoxy: UL 94V-0 rate flame retardant Lead: MIL-STD-.BUT11 - NPN SILICON TRANSISTOR
BUT11/11A HIGH VOLTAGE POWER SWITCHING APPLICATIONS NPN SILICON TRANSISTOR TO-220 ABSOLUTE MAXIMUM RATINGS (Ta=25°c) Characteristic Collector-Emi.BUT12AF - SILICON DIFFUSED POWER TRANSISTOR(GENERAL DESCRIPTION)
BUT12AF GENERAL DESCRIPTION SILICON DIFFUSED POWER TRANSISTOR Highvoltage,high-speed switching npn transistors in a metal envelope ,primarily for us.MJ10000 - NPN Silicon Transistor
MJ10000 NPN SILICON TRANSISTOR SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS TO-3 ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characterist.DB310K - BI-DIRECTIONAL TRIGGER DIODES
DB3 BI-DIRECTIONAL TRIGGER DIODES DO-35 Symbol VBO Parameter BREAKDOWN VOLTAGE Test Condition 1 SEE FIG 1 t Min Typ Max Uni Type Package m.