Z120 Datasheet | Specifications & PDF Download

IMZ120R140M1H IMZ120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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IMZ120R350M1H IMZ120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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IMZ120R090M1H IMZ120R090M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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Elektronische Bauelemente 3EZxxxD5 Series Voltage 6.2V~200V 3 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of “-C” specifies halo

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http://www.fujielectric.com/products/semiconductor/ 7MBR50VZ120-50 IGBT Modules IGBT MODULE (V series) 1200V / 50A / PIM Features Low VCE(sat) Com

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MOSFETs Silicon Carbide N-Channel MOS TW015Z120C TW015Z120C 1. Applications • Switching Voltage Regulators 2. Features (1) Chip design of 3rd genera

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Zener Diodes MAZ1000 Series Silicon planar type For stabilization of power supply I Features • High reliability, achieved by the combination the plan

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Walsin Technology Corporation MULTILAYER CHIP VARISTOR For ESD / Surge Protection VZ0402,VZ0603,VZ0805,VZ1206 Green Material Series – RoHS Complianc

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ϯtdžŝĂů>ĞĂĚĞŶĞƌŝŽĚĞƐͲϲ͘ϮsƚŽϮϬϬs ϯ ϲ͘Ϯϱ THRU ϯ ϮϬϬϱ PRIMARY CHARACTERISTICS PD 3W VZ 6.2V~200V IZT TJ,Max Please refer to the spe

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L1N4738 thru LZ1200 Surface Mount Zener Diodes Vz Range: 8.2 to 200V Power Dissipation: 1W Features • Toal power dissipation: max1.0W • Low leakage c

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Technische Information / Technical Information IGBT-Modul IGBT-Module FZ1200R12HE4 IHM-B Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4

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Elektronische Bauelemente SMA47xx-C Series Voltage 5.6V~300V 1.0 Watts Surface Mount Zener Diode RoHS Compliant Product A suffix of “-C” specifies h

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Current Transducers HAZ 4000..20000-SB For the electronic measurement of currents: DC, AC, pulsed, mixed, with a galvanic isolation between the primar

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Certificate TH97/10561QM Certificate TW00/17276EM 3EZ3.9D10 ~ 3EZ200D10 SILICON ZENER DIODES VZ : 3.9 - 200 Volts PD : 3 Watts DO - 41 FEATURES

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Product Folder Sample & Buy Technical Documents Tools & Software Support & Community LMZ12003 SNVS636O – DECEMBER 2009 – REVISED AUGUST 2015 LMZ1

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IMZ120R030M1H IMZ120R030M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switching losses  Threshold-free on state c

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3EZxxxD5 SERIES 1.0 (25.4) MIN. .034 (0.9) DIA. .028 (0.7) .300 (7.6) .230 (5.8) 1.0 (25.4) MIN. .140 (3.6) .104 (2.6) D I A . DO-15 Dimensions i

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PZ1203EV P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) -30V 12mΩ @VGS = -10V ID -12A SOP- 8 ABSOLUTE MAXIMUM

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www.DataSheet4U.com Technische Information / Technical Information IGBT-Module IGBT-Modules FZ 1200 R 33 KF2 Datenblatt data sheet Höchstzulässige

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