dsi Datasheet | Specifications & PDF Download

Lontium Semiconductor LT8912_Datasheet_R1.8 LONTIUM SEMICONDUCTOR CORPORATION ClearedEdge Technology LT8912 Single-Channel MIPI® DSI Bridge to LVDS

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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Ta

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Lontium Semiconductor LT7911D Datasheet R1.2 LONTIUM SEMICONDUCTOR CORPORATION ClearEdge Technology LT7911D Type-C to Dual-port MIPI DSI/CSI with A

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DATASHEET UJ3N120065K3S CASE CASE D (2) 123 G (1) S (3) Silicon Carbide (SiC) JFET - EliteSiC, Power N-Channel, TO-247-3L, 1200 V, 66 mohm Rev. B

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CS5518 Datasheet MIPI DSI to LVDS Convertor Ver 1.0 September, 2022 Contents CS5518 Datasheet 1 Introduction

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Description 9mΩ - 1200V SiC Half-Bridge Module | UHB100SC12E1BC3-N Datasheet United Silicon Carbide's SiC FET products feature a stacked cascode for

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Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only

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DATASHEET UF3C120150B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 150 mohm Rev. C, Jan 2025 Description 1 7 T

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650V-42mW SiC Cascode DATASHEET UF3C065040K4S CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-packag

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xR SiC Series 20A - 1200V SiC Schottky Diode UJ2D1220K Features Positive temperature coefficient for safe operation and ease of paralleling

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1200V-35mW SiC FET DATASHEET UJ3C120040K3S CASE CASE D (2) Rev. D, December 2019 Description This SiC FET device is based on a unique ‘cascode’ ci

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750V-5.9mW SiC FET DATASHEET UJ4SC075006K4S CASE CASE D (1) Rev. B, July 2021 Description The UJ4SC075006K4S is a 750V, 5.9mW G4 SiC FET. It is ba

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DATASHEET UF3N065300Z 650V-265mW SiC Normally-on JFET Rev. B, January 2020 Description UnitedSiC offers the high-performance G3 SiC normally-on JFET

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DATASHEET UF4SC120023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 23 mohm Rev. B, January 2

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DATASHEET UJ4SC075011B7S 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 750V, 11 moh

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DATASHEET UJ4C075018K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 18 mohm Rev. B, January 202

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DATASHEET UJ4C075023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 23 mohm Rev. C, January 202

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