ectifier Datasheet | Specifications & PDF Download

Schottky Barrier Rectifiers Production specification SL22F--SL245F Features  Metal silicon junction, majority carrier conduction  High surge capab

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MBR3045ST, MBRB3045CT-1 Switch‐mode Power Rectifier Features and Benefits • Dual Diode Construction − Terminals 1 and 3 May Be Connected for Paralle

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MBRP3045N — Schottky Barrier Rectifier MBRP3045N Schottky Barrier Rectifier Applications • Switched mode power supply • Freewheeling diodes Features

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OBSOLETE – PART DISCONTINUED PART OBSOLETE USE S3A-S3M Series 1N5400 - 1N5408 3.0A RECTIFIER Features • Diffused Junction • High Current Capability

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1N4001 - 1N4007 — General-Purpose Rectifiers November 2014 1N4001 - 1N4007 General-Purpose Rectifiers Features • Low Forward Voltage Drop • High Su

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File No.3 - - - - - - - - - - - - - - - - - - - - ' - - - - - - - - - - - - - - - ffilm3LJlJ Rectifiers Solid State Division 1N5361N5381N540 1N537

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PD - 91671B IRFZ44E HEXFET® Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully

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September 2007 www.DataSheet4U.com IRS2092 PROTECTED DIGITAL AUDIO AMPLIFIER Features • • • • • • • • • Integrated analog input Class D audio amplif

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www.DataSheet4U.com PD - 91437B IRF9540N HEXFET® Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperat

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SK12 SK115 SK12 SK115 SMD Schottky Barrier Rectifier Diodes SMD Schottky-Gleichrichterdioden Version 2017-01-26 ~ SMA / ~ DO-214AC 5± 0.2

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SINGLE PHASE GLASS PASSIVATED BRIDGE RECTIEFIER MB2M ~ MB10M Single Phase Glass Passivated Bridge Rectifier Features  UL recognized under File #E1

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Trench Schottky Barrier Rectifiers 30SQ050 R-6 Reverse Voltage - 50V Forward Current - 30A FEATURES The plastic package carries Underwriters Laborat

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SEMICONDUCTOR KBPC35 RRooHHSS Nell High Power Products Single-Phase Bridge Rectifier, 35A KBPC3506 Thru KBPC3512 FEATURES UL recognition file number

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SILICON RECTIFIER VOLTAGE RANGE 1000 Volts CURRENT 3.0 Ampere 1N5400 THRU 1N5408 FEATURES * Low cost * Low leakage * Low forward voltage drop * High

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PD -94000 IRF7328 HEXFET® Power MOSFET q q q q Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Available in Tape & Reel VDSS -30V

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Features  Glass Passivated Die Construction  Ultra-Fast Recovery Time for High Efficiency  Surge Overload Rating to 30A Peak  High Current Capabil

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www.eicsemi.com SB5150 ~ SB5200 TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 150 ~ 200 Volts IO : 5.0 A

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CREAT BY ART 3A, 50V - 1000V Silicon Rectifiers 1N5400 - 1N5408 Taiwan Semiconductor FEATURES - High efficiency, Low VF - High current capability -

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1N5400-1N5408 Technical Data Data Sheet N0547, Rev. A 1N5400 THRU 1N5408 GLASS PASSIVATED SILICON RECTIFIER Features DO-201AD  The plastic package

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RFT SY360/05 … SY360/16 – SY361/10 … SY361/18 Silizium- Gleichrichterdioden kleiner Leistung im Miniatur- Plast- Gehäuse Typ SY360/05 1 2 3 4 6 8 10

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