| Part Number | Description | Manufacture |
|---|---|---|
|
|
IRG4BC30UD • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM u |
 International Rectifier |
|
|
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • IGBT co-packaged with HEXFREDTM u |
International Rectifier |
|
|
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard TO-220AB packag |
International Rectifier |
|
|
UltraFast Speed IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed |
International Rectifier |
|
|
INSULATED GATE BIPOLAR TRANSISTOR • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 • Industry standard D2Pak package C |
International Rectifier |
|
|
UltraFast Speed IGBT • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode • Industry standard D2Pak & TO-262 package • Lead-Free, RoHS Compliant • Automotive Qualified * AUIRG4BC30U-S AUIRG4BC30U-SL UltraFast Speed |
International Rectifier |
|
|
INSULATED GATE BIPOLAR TRANSISTOR UltraFast CoPack IGBT UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, 200 kHz in resonant mode Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3 IGBT co-p |
International Rectifier |
